SCHEMBL770611

SCHEMBL770611

[Ga].[In+3].[P-3]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL339303 0.87
SCHEMBL11102476 0.87
SCHEMBL2356394 0.87
SCHEMBL2349953 0.87
SCHEMBL6894651 0.82
SCHEMBL26807 0.82
SCHEMBL5435835 0.78
SCHEMBL6311060 0.71
SCHEMBL1360571 0.67
SCHEMBL3164255 0.67

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 49 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-1969639-B1 NOTCH FILTER FOR TRIPLE JUNCTION SOLAR CELLS BOEING CO (US) 2018-05-23 EP claimed
US-20180006180-A1 WAFER BONDED SOLAR CELLS AND FABRICATION METHODS INTERNATIONAL BUSINESS MACHINES CORPORATION 2018-01-04 US claimed
US-8637759-B2 Notch filter for triple junction solar cells THE BOEING COMPANY (US) 2014-01-28 US claimed
EP-1969639-A2 NOTCH FILTER FOR TRIPLE JUNCTION SOLAR CELLS The Boeing Company (US) 2008-09-17 EP claimed
WO-2007089333-A2 NOTCH FILTER FOR TRIPLE JUNCTION SOLAR CELLS THE BOEING COMPANY (US) 2007-08-09 WO claimed
US-20070137694-A1 Notch filter for triple junction solar cells THE BOEING COMPANY 2007-06-21 US claimed
US-20040144984-A1 Fabrication method for surface emitting semiconductor device and surface emitting semiconductor device FORSCHUNGSVERBUND BERLING E.V. (DE) 2004-07-29 US claimed
US-5917201-A Light emitting diode with asymmetrical energy band structure EPISTAR CO. (TW) 1999-06-29 US claimed
US-5376185-A Comprising indium phosphide and quaternary III-V semiconductor alloy layers, antireflection coating MIDWEST RESEARCH INSTITUTE (US) 1994-12-27 US claimed
US-10131017-B2 Laser nanomachining device and method Centre National de la Recherche Scientifique—CNRS (FR) 2018-11-20 US disclosed
EP-3349352-A1 WINDOW BLIND LG Electronics Inc. (KR) 2018-07-18 EP disclosed
US-20180195766-A1 WINDOW BLIND LG ELECTRONICS INC. (KR) 2018-07-12 US disclosed
EP-1969639-B1 NOTCH FILTER FOR TRIPLE JUNCTION SOLAR CELLS BOEING CO (US) 2018-05-23 EP disclosed
US-20150158120-A1 LASER NANOMACHINING DEVICE AND METHOD Université de Franche-Comté (FR) 2015-06-11 US disclosed
EP-0721654-A4 IMAGE INTENSIFIER TUBE INT STANDARD ELECTRIC CORP (US) 1996-05-30 EP disclosed
WO-1995009433-A1 IMAGE INTENSIFIER TUBE INTERNATIONAL STANDARD ELECTRIC CORP. (US) 1995-04-06 WO disclosed
US-5349177-A Image intensifier tube having a solid state electron amplifier ITT CORPORATION (US) 1994-09-20 US disclosed
US-5026655-A Process of fabricating a heterojunction field effect transistor NEC CORPORATION (JP) 1991-06-25 US disclosed
US-4893155-A Heterojunction field effect transistor device and process of fabrication thereof GENERAL ELECTRIC COMPANY (US) 1990-01-09 US disclosed
US-4137122-A Method of manufacturing a semiconductor device U.S. PHILIPS CORPORATION (US) 1979-01-30 US disclosed