⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Hydrogen Sulfide SCHEMBL28056625 | 0.89 | — | — | |
| SCHEMBL28521608 | 0.89 | — | — | |
| SCHEMBL156271 | 0.87 | — | — | |
| Hydrogen Sulfide SCHEMBL28056507 | 0.75 | — | — | |
| Hydrogen Sulfide SCHEMBL28056508 | 0.67 | — | — | |
| SCHEMBL28409259 | 0.67 | — | — | |
| SCHEMBL30976542 | 0.67 | — | — | |
| SCHEMBL9144971 | 0.50 | — | — | |
| SCHEMBL268827 | 0.50 | — | — | |
| SCHEMBL10698912 | 0.50 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 83 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-107278323-A | The method that the epitaxial growth of material interface compensation, between ii I V race's materials and silicon wafer of overstrain is provided | 集成太阳能公司 | 2017-10-20 | — | — | CN | claimed |
| CN-104974759-A | QUANTUM DOT STABILIZED BY HALOGEN SALT AND METHOD FOR MANUFACTURING THE SAME | KOREA MACH & MATERIALS INST | 2015-10-14 | — | — | CN | claimed |
| US-5818072-A | Integrated heterostructure of group II-VI semiconductor materials including epitaxial ohmic contact and method of fabricating same | NORTH CAROLINA STATE UNIVERSITY (US) | 1998-10-06 | — | — | US | claimed |
| EP-0640248-B1 | Epitaxial ohmic contact for integrated heterostructure of Group II-VI semiconductor materials and method of fabricating same | UNIV NORTH CAROLINA STATE (US) | 1997-12-17 | — | — | EP | claimed |
| EP-0640248-A1 | Epitaxial ohmic contact for integrated heterostructure of Group II-VI semiconductor materials and method of fabricating same | NORTH CAROLINA STATE UNIVERSITY (US) | 1995-03-01 | — | — | EP | claimed |
| US-5366927-A | Method of fabricating epitaxially deposited ohmic contacts using group II-VI | NORTH CAROLINA STATE UNIVERSITY (US) | 1994-11-22 | — | — | US | claimed |
| US-5351255-A | Inverted integrated heterostructure of group II-VI semiconductor materials including epitaxial ohmic contact and method of fabricating same | NORTH CAROLINA STATE UNIVERSITY OF RALEIGH (US) | 1994-09-27 | — | — | US | claimed |
| US-5294833-A | Integrated heterostructure of Group II-VI semiconductor materials including epitaxial ohmic contact and method of fabricating same | NORTH CAROLINA STATE UNIVERSITY (US) | 1994-03-15 | — | — | US | claimed |
| WO-1993023883-A1 | INTEGRATED HETEROSTRUCTURE OF GROUP II-VI SEMICONDUCTOR MATERIALS INCLUDING EPITAXIAL OHMIC CONTACT AND METHOD OF FABRICATING SAME | NORTH CAROLINA STATE UNIVERSITY (US) | 1993-11-25 | — | — | WO | claimed |
| CN-115260456-B | Quantum dot composition and light-emitting device | 财团法人工业技术研究院 | 2024-06-04 | — | — | CN | disclosed |
| EP-4182975-A1 | METHOD FOR PRODUCING AN LED AND LED PRODUCED BY SAID METHOD | Commissariat à l'Énergie Atomique et aux Énergies Alternatives (FR) | 2023-05-24 | — | — | EP | disclosed |
| CN-109072067-B | Quantum dot and preparation method thereof | 杰宜斯科技有限公司 | 2022-06-03 | — | — | CN | disclosed |
| CN-109476964-B | Polymeric binder layer as a ceramic precursor | 3M创新有限公司 | 2022-04-26 | — | — | CN | disclosed |
| CN-107438775-B | Detector for optical detection of at least one object | 特里纳米克斯股份有限公司 | 2022-01-21 | — | — | CN | disclosed |
| US-5366927-A | Method of fabricating epitaxially deposited ohmic contacts using group II-VI | NORTH CAROLINA STATE UNIVERSITY (US) | 1994-11-22 | — | — | US | disclosed |
| US-5351255-A | Inverted integrated heterostructure of group II-VI semiconductor materials including epitaxial ohmic contact and method of fabricating same | NORTH CAROLINA STATE UNIVERSITY OF RALEIGH (US) | 1994-09-27 | — | — | US | disclosed |
| US-5351255-A | Inverted integrated heterostructure of group II-VI semiconductor materials including epitaxial ohmic contact and method of fabricating same | NORTH CAROLINA STATE UNIVERSITY OF RALEIGH (US) | 1994-09-27 | — | — | US | disclosed |
| US-5294833-A | Integrated heterostructure of Group II-VI semiconductor materials including epitaxial ohmic contact and method of fabricating same | NORTH CAROLINA STATE UNIVERSITY (US) | 1994-03-15 | — | — | US | disclosed |
| WO-1993023883-A1 | INTEGRATED HETEROSTRUCTURE OF GROUP II-VI SEMICONDUCTOR MATERIALS INCLUDING EPITAXIAL OHMIC CONTACT AND METHOD OF FABRICATING SAME | NORTH CAROLINA STATE UNIVERSITY (US) | 1993-11-25 | — | — | WO | disclosed |
| WO-1993023883-A1 | INTEGRATED HETEROSTRUCTURE OF GROUP II-VI SEMICONDUCTOR MATERIALS INCLUDING EPITAXIAL OHMIC CONTACT AND METHOD OF FABRICATING SAME | NORTH CAROLINA STATE UNIVERSITY (US) | 1993-11-25 | — | — | WO | disclosed |