Ammonia Solution, Strong

Ammonia Solution, Strong

SCHEMBL7721218

N.O=P(O)(O)C([N+](C(P(=O)(O)O)P(=O)(O)O)(C(P(=O)(O)O)P(=O)(O)O)C(P(=O)(O)O)P(=O)(O)OCCOCCO)P(=O)(O)O

nearest known ligand 0.37

Full drug profile on Sugi Atlas →

Predicted protein targets (top 4)

geneUniProtsupporting neighboursconfidence
MEN1 O00255 1/20 0.37
KMT2A Q03164 1/20 0.37
TSHR P16473 1/20 0.33
MAPK1 P28482 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Triethylene Glycol SCHEMBL9302655 0.70 MEN1 (0.50) MEN1KMT2ATSHRMAPK1
Tetraethylene Glycol SCHEMBL9301839 0.70 MEN1 (0.50) MEN1KMT2ATSHRMAPK1
SCHEMBL125343 0.69 MEN1 (0.55) MEN1KMT2ATSHRMAPK1
SCHEMBL236333 0.69 MEN1 (0.55) MEN1KMT2ATSHRMAPK1
SCHEMBL899138 0.69 MEN1 (0.55) MEN1KMT2ATSHRMAPK1
SCHEMBL1627450 0.69 MEN1 (0.55) MEN1KMT2ATSHRMAPK1
SCHEMBL8860368 0.69 MEN1 (0.55) MEN1KMT2ATSHRMAPK1
SCHEMBL113727 0.69 MEN1 (0.55) MEN1KMT2ATSHRMAPK1
SCHEMBL875411 0.69 MEN1 (0.55) MEN1KMT2ATSHRMAPK1
SCHEMBL10998172 0.69 MEN1 (0.55) MEN1KMT2ATSHRMAPK1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 13 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6495096-B1 DEODORANT FOR SUBSTANCES CONTAINING AT LEAST ONE OF HYDROGEN SULFIDE AND MERCAPTANS WHICH COMPRISES COMBINATION OF PEROXIDE, CHELATING AGENT AND NITRATE ION MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2002-12-17 US claimed
US-11859119-B2 Chemical liquid and method for treating object to be treated FUJIFILM CORPORATION (JP) 2024-01-02 US disclosed
US-20230159864-A1 TREATMENT LIQUID AND METHOD FOR TREATING OBJECT TO BE TREATED FUJIFILM CORPORATION (JP) 2023-05-25 US disclosed
US-20220002622-A1 CHEMICAL LIQUID AND METHOD FOR TREATING OBJECT TO BE TREATED FUJIFILM CORPORATION (JP) 2022-01-06 US disclosed
US-10106736-B2 Etching agent for semiconductor substrate SETTSU OIL MILL., INC. (JP) 2018-10-23 US disclosed
US-20170306229-A1 ETCHING AGENT FOR SEMICONDUCTOR SUBSTRATE SETTSU OIL MILL., INC. (JP) 2017-10-26 US disclosed
US-9334470-B2 Cleaning liquid composition for electronic device KANTO KAGAKU KABUSHIKI KAISHA (JP) 2016-05-10 US disclosed
EP-2602309-A1 Cleaning alkaline liquid composition for electronic device comprising a phosphonic acid derivative chelating agent Kanto Kagaku Kabushiki Kaisha (JP) 2013-06-12 EP disclosed
US-20130143785-A1 CLEANING LIQUID COMPOSITION FOR ELECTRONIC DEVICE KANTO KAGAKU KABUSHIKI KAISHA (JP) 2013-06-06 US disclosed
US-6495096-B1 DEODORANT FOR SUBSTANCES CONTAINING AT LEAST ONE OF HYDROGEN SULFIDE AND MERCAPTANS WHICH COMPRISES COMBINATION OF PEROXIDE, CHELATING AGENT AND NITRATE ION MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2002-12-17 US disclosed
EP-0560324-B1 Cleaning fluid for semiconductor substrate MITSUBISHI GAS CHEMICAL CO (JP) 1998-08-19 EP disclosed
US-5705089-A HYDROGEN PEROXIDE, PHOSPHONIC ACID CHELATEING AGENT, WETTING AGENT MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 1998-01-06 US disclosed
EP-0560324-A1 Cleaning fluid for semiconductor substrate MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 1993-09-15 EP disclosed