SCHEMBL7750545

SCHEMBL7750545

[Rb+].[Rb+].[Rb+].[Rb+].[Rb+].[Rb+].[Rb+].[Rb+].[Rb+].[Rb+].[S-2].[S-2].[S-2].[S-2].[S-2]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL7514044 1.00
SCHEMBL442634 1.00
Water SCHEMBL11586540 0.82
SCHEMBL14661213 0.82
SCHEMBL868193 0.82
SCHEMBL30462297 0.82
SCHEMBL25902 0.71
SCHEMBL4559297 0.71
SCHEMBL11034701 0.71
SCHEMBL9175196 0.71

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2001025146-A2 METHOD OF PREPARING ANHYDROUS ALKALI METAL SULFIDES PPG INDUSTRIES OHIO, INC. (US) 2001-04-12 WO disclosed
US-4214183-A DIELECTRIC CHARGE STORAGE LAYER CONTAINING RUBIDIUM OXIDE OR FRANCIUM OXIDE OWENS-ILLINOIS, INC. (US) 1980-07-22 US disclosed
US-4121133-A Dielectric for multiple gaseous discharge display/memory panel having improved voltage characteristics OWENS-ILLINOIS, INC. (US) 1978-10-17 US disclosed
US-4114064-A MULTIPLE GASEOUS DISCHARGE DISPLAY/MEMORY PANEL HAVING IMPROVED VOLTAGE CHARACTERISTICS OWENS-ILLINOIS, INC. (US) 1978-09-12 US disclosed
US-3932920-A MEMORY PANEL HAVING IMPROVED VOLTAGE CHARACTERISTICS OWENS-ILLINOIS, INC. (US) 1976-01-20 US disclosed