SCHEMBL782076

SCHEMBL782076

CCC1=C([Hf](C2=C(CC)C=CC2)(C2=C(CC)C=CC2)C2=C(CC)C=CC2)CC=C1

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL515648 0.84
SCHEMBL18167967 0.79
SCHEMBL20496525 0.79
SCHEMBL20496513 0.77
SCHEMBL20377470 0.77
SCHEMBL20496590 0.76
SCHEMBL19582772 0.76
SCHEMBL20496593 0.74
SCHEMBL19582770 0.74
SCHEMBL8575865 0.70

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8866139-B2 Nonvolatile semiconductor memory device KABUSHIKI KAISHA TOSHIBA (JP) 2014-10-21 US disclosed
US-8569823-B2 Semiconductor device and manufacturing method thereof KABUSHIKI KAISHA TOSHIBA (JP) 2013-10-29 US disclosed
US-20130234130-A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE TOSHIBA MEMORY CORPORATION (JP) 2013-09-12 US disclosed
US-8390054-B2 Semiconductor memory element and semiconductor memory device KABUSHIKI KAISHA TOSHIBA (JP) 2013-03-05 US disclosed
US-20120068250-A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF TOSHIBA MEMORY CORPORATION (JP) 2012-03-22 US disclosed
US-20110241101-A1 SEMICONDUCTOR MEMORY ELEMENT AND SEMICONDUCTOR MEMORY DEVICE KABUSHIKI KAISHA TOSHIBA (JP) 2011-10-06 US disclosed