⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL17356121 | 0.77 | TDP1 (0.32) | — | |
| SCHEMBL8518968 | 0.75 | — | — | |
| SCHEMBL3391497 | 0.71 | — | — | |
| SCHEMBL19214056 | 0.71 | TDP1 (0.32) | — | |
| SCHEMBL18747045 | 0.71 | — | — | |
| SCHEMBL10710182 | 0.69 | — | — | |
| SCHEMBL463269 | 0.69 | — | — | |
| SCHEMBL7944539 | 0.67 | — | — | |
| SCHEMBL1819285 | 0.67 | — | — | |
| SCHEMBL1822071 | 0.67 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 34 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| WO-2022191429-A1 | METHOD FOR ETCHING MULTI-LAMINATE OF SILICON-CONTAINING FILMS, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, COMPRISING SAME | 에스케이 머티리얼즈 주식회사 | 2022-09-15 | — | — | WO | claimed |
| WO-2022057226-A1 | GEL ELECTROLYTE PRECURSOR AND USE THEREOF | 蜂巢能源科技股份有限公司 | 2022-03-24 | — | — | WO | claimed |
| US-20190326126-A1 | METHODS FOR MINIMIZING SIDEWALL DAMAGE DURING LOW K ETCH PROCESSES | AIR LIQUIDE ELECTRONICS U.S. LP | 2019-10-24 | — | — | US | claimed |
| US-10347498-B2 | Methods of minimizing plasma-induced sidewall damage during low K etch processes | L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE (FR) | 2019-07-09 | — | — | US | claimed |
| US-10256109-B2 | Nitrogen-containing compounds for etching semiconductor structures | AMERICAN AIR LIQUIDE, INC. (US) | 2019-04-09 | — | — | US | claimed |
| US-20180211845-A1 | METHODS OF MINIMIZING PLASMA-INDUCED SIDEWALL DAMAGE DURING LOW K ETCH PROCESSES | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude (FR) | 2018-07-26 | — | — | US | claimed |
| US-20170229316-A1 | NITROGEN-CONTAINING COMPOUNDS FOR ETCHING SEMICONDUCTOR STRUCTURES | AIR LIQUIDE AMERICAN (US) | 2017-08-10 | — | — | US | claimed |
| US-20170110336-A1 | METHODS FOR MINIMIZING SIDEWALL DAMAGE DURING LOW K ETCH PROCESSES | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude (FR) | 2017-04-20 | — | — | US | claimed |
| US-20150371869-A1 | NITROGEN-CONTAINING COMPOUNDS FOR ETCHING SEMICONDUCTOR STRUCTURES | AMERICAN AIR LIQUIDE, INC. | 2015-12-24 | — | — | US | claimed |
| WO-2022191429-A1 | METHOD FOR ETCHING MULTI-LAMINATE OF SILICON-CONTAINING FILMS, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, COMPRISING SAME | 에스케이 머티리얼즈 주식회사 | 2022-09-15 | — | — | WO | disclosed |
| US-11024513-B2 | Methods for minimizing sidewall damage during low k etch processes | AIR LIQUIDE ELECTRONICS U.S. LP (US) | 2021-06-01 | — | — | US | disclosed |
| US-11024513-B2 | Methods for minimizing sidewall damage during low k etch processes | AIR LIQUIDE ELECTRONICS U.S. LP (US) | 2021-06-01 | — | — | US | disclosed |
| US-20190326126-A1 | METHODS FOR MINIMIZING SIDEWALL DAMAGE DURING LOW K ETCH PROCESSES | AIR LIQUIDE ELECTRONICS U.S. LP | 2019-10-24 | — | — | US | disclosed |
| US-20190326126-A1 | METHODS FOR MINIMIZING SIDEWALL DAMAGE DURING LOW K ETCH PROCESSES | AIR LIQUIDE ELECTRONICS U.S. LP | 2019-10-24 | — | — | US | disclosed |
| US-20170110336-A1 | METHODS FOR MINIMIZING SIDEWALL DAMAGE DURING LOW K ETCH PROCESSES | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude (FR) | 2017-04-20 | — | — | US | disclosed |
| US-20150371869-A1 | NITROGEN-CONTAINING COMPOUNDS FOR ETCHING SEMICONDUCTOR STRUCTURES | AMERICAN AIR LIQUIDE, INC. | 2015-12-24 | — | — | US | disclosed |
| US-20150371869-A1 | NITROGEN-CONTAINING COMPOUNDS FOR ETCHING SEMICONDUCTOR STRUCTURES | AMERICAN AIR LIQUIDE, INC. | 2015-12-24 | — | — | US | disclosed |
| US-20150371869-A1 | NITROGEN-CONTAINING COMPOUNDS FOR ETCHING SEMICONDUCTOR STRUCTURES | AMERICAN AIR LIQUIDE, INC. | 2015-12-24 | — | — | US | disclosed |
| US-RE37022-E1 | A FLUORINE CONTAINING POLYMER COMPRISING A POLYMER HAVING A FUNCTIONAL GROUP AND A FLUORINE-CONTAINING ALIPHATIC CYCLIC STRUCTURE DISSOLVED IN A SOLVENT MIXTURE OF AN APROTIC AND PROTIC FLUORINE-CONTAINING SOLVENTS | ASAHI GLASS COMPANY LTD. (JP) | 2001-01-16 | — | — | US | disclosed |
| US-5498657-A | ALIPHATIC CYCLIC STRUCTURE | ASAHI GLASS COMPANY LTD. (JP) | 1996-03-12 | — | — | US | disclosed |