⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL794931 | 0.92 | — | — | |
| SCHEMBL21042075 | 0.92 | — | — | |
| SCHEMBL794958 | 0.77 | — | — | |
| SCHEMBL8027173 | 0.77 | — | — | |
| SCHEMBL11911323 | 0.77 | — | — | |
| SCHEMBL47859 | 0.77 | — | — | |
| SCHEMBL24700233 | 0.73 | — | — | |
| SCHEMBL13548400 | 0.73 | — | — | |
| SCHEMBL24465249 | 0.73 | — | — | |
| SCHEMBL3744747 | 0.70 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 16 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8815490-B2 | Radiation-sensitive resin composition, polymer, and method for forming resist pattern | JSR CORPORATION (JP) | 2014-08-26 | — | — | US | disclosed |
| US-8758978-B2 | Radiation-sensitive resin composition, resist pattern formation method, and polymer | JSR CORPORATION (JP) | 2014-06-24 | — | — | US | disclosed |
| US-8697331-B2 | Compound, polymer, and radiation-sensitive composition | JSR CORPORATION (JP) | 2014-04-15 | — | — | US | disclosed |
| US-8535871-B2 | Radiation-sensitive resin composition, method for forming a resist pattern, compound, and polymer | JSR CORPORATION (JP) | 2013-09-17 | — | — | US | disclosed |
| US-8530692-B2 | Compound, fluorine-containing polymer, radiation-sensitive resin composition and method for producing compound | JSR CORPORATION (JP) | 2013-09-10 | — | — | US | disclosed |
| US-8501385-B2 | Positive-type radiation-sensitive composition, and resist pattern formation method | JSR CORPORATION (JP) | 2013-08-06 | — | — | US | disclosed |
| US-20120183902-A1 | RADIATION-SENSITIVE RESIN COMPOSITION | JSR CORPORATION (JP) | 2012-07-19 | — | — | US | disclosed |
| US-20120171612-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, RESIST PATTERN FORMATION METHOD, AND POLYMER | JSR CORPORATION (JP) | 2012-07-05 | — | — | US | disclosed |
| US-20120156612-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING A RESIST PATTERN, COMPOUND, AND POLYMER | JSR CORPORATION (JP) | 2012-06-21 | — | — | US | disclosed |
| US-20120100480-A1 | COMPOUND, FLUORINE-CONTAINING POLYMER, RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD FOR PRODUCING COMPOUND | JSR CORPORATION (JP) | 2012-04-26 | — | — | US | disclosed |
| US-20120094234-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, POLYMER, AND METHOD FOR FORMING RESIST PATTERN | JSR CORPORATION (JP) | 2012-04-19 | — | — | US | disclosed |
| US-20120070783-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, POLYMER, AND METHOD FOR FORMING RESIST PATTERN | JSR CORPORATION (JP) | 2012-03-22 | — | — | US | disclosed |
| US-20110212401-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST PATTERN FORMATION METHOD | JSR CORPORATION (JP) | 2011-09-01 | — | — | US | disclosed |
| US-20110151378-A1 | RADIATION-SENSITIVE RESIN COMPOSITION FOR LIQUID IMMERSION LITHOGRAPHY, POLYMER, AND RESIST PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2011-06-23 | — | — | US | disclosed |
| US-20110104611-A1 | NOVEL COMPOUND, POLYMER, AND RADIATION-SENSITIVE COMPOSITION | JSR CORPORATION (JP) | 2011-05-05 | — | — | US | disclosed |
| US-20110104612-A1 | POSITIVE-TYPE RADIATION-SENSITIVE COMPOSITION, AND RESIST PATTERN FORMATION METHOD | JSR CORPORATION (JP) | 2011-05-05 | — | — | US | disclosed |