SCHEMBL7986814

SCHEMBL7986814

O=C1OCCC1O[SiH3]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL19335038 0.76
SCHEMBL5950782 0.76
SCHEMBL14470625 0.76
SCHEMBL319924 0.76
SCHEMBL16808523 0.76
SCHEMBL13093541 0.76
SCHEMBL10250236 0.76
SCHEMBL826310 0.76
SCHEMBL319925 0.76
SCHEMBL1251003 0.76

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 21 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20170372892-A1 Gap Filling Materials and Methods TAIWAN SEMICONDUCTOR MFG CO LTD (TW) 2017-12-28 US disclosed
US-9761449-B2 Gap filling materials and methods TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2017-09-12 US disclosed
US-9761449-B2 Gap filling materials and methods TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2017-09-12 US disclosed
US-9543147-B2 Photoresist and method of manufacture TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2017-01-10 US disclosed
US-9543147-B2 Photoresist and method of manufacture TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2017-01-10 US disclosed
US-9502231-B2 Photoresist layer and method TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2016-11-22 US disclosed
US-9502231-B2 Photoresist layer and method TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2016-11-22 US disclosed
US-9460909-B2 Method for manufacturing semiconductor device TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2016-10-04 US disclosed
US-9460909-B2 Method for manufacturing semiconductor device TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2016-10-04 US disclosed
US-20160155626-A1 Method for Manufacturing Semiconductor Device TAIWAN SEMICONDUCTOR MFG (TW) 2016-06-02 US disclosed
US-9256128-B2 Method for manufacturing semiconductor device TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2016-02-09 US disclosed
US-20160005595-A1 Photoresist and Method of Manufacture TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2016-01-07 US disclosed
US-20160005595-A1 Photoresist and Method of Manufacture TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2016-01-07 US disclosed
US-20150187565-A1 Gap Filling Materials and Methods TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY (TW) 2015-07-02 US disclosed
US-20150187565-A1 Gap Filling Materials and Methods TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY (TW) 2015-07-02 US disclosed
US-20150111384-A1 Anti-Reflective Layer and Method TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY (TW) 2015-04-23 US disclosed
US-20150111384-A1 Anti-Reflective Layer and Method TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY (TW) 2015-04-23 US disclosed
US-6262073-B1 INHIBITING THE ACTION OF A PRO-INFLAMMATORY CYTOKINE OXIS INTERNATIONAL INC. 2001-07-17 US disclosed
US-6136832-A RACEMIC MIXTURES AND ENANTIOMORPHS OXIS INTERNATIONAL INC. (US) 2000-10-24 US disclosed
US-6005000-A 5,5-Disubstituted-3, 4-dihydroxy-2(5H)-furanones and methods of use therefor OXIS INTERNATIONAL, INC. (US) 1999-12-21 US disclosed