⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Selenium SCHEMBL9052761 | 0.87 | — | — | |
| Selenium SCHEMBL8927727 | 0.87 | — | — | |
| Selenium SCHEMBL31529975 | 0.87 | — | — | |
| Selenium SCHEMBL30686674 | 0.87 | — | — | |
| Selenium SCHEMBL160388 | 0.82 | — | — | |
| Selenium SCHEMBL9658408 | 0.82 | — | — | |
| Selenium SCHEMBL9745167 | 0.82 | — | — | |
| Selenium SCHEMBL44189 | 0.82 | — | — | |
| Selenium SCHEMBL413432 | 0.82 | — | — | |
| SCHEMBL35110 | 0.82 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 42 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-111504962-B | Method for detecting ions based on water-phase zinc-cadmium-selenium fluorescent quantum dots | 杭州电子科技大学 | 2022-11-11 | — | — | CN | claimed |
| CN-112011339-A | Method for preparing water-soluble ternary zinc-cadmium-selenium alloy quantum dots based on photoinduction | 南通大学 | 2020-12-01 | — | — | CN | claimed |
| CN-111504962-A | Method for detecting ions based on water-phase zinc-cadmium-selenium fluorescent quantum dots | 杭州电子科技大学 | 2020-08-07 | — | — | CN | claimed |
| CN-105670631-B | A kind of self-passivation quantum dot and preparation method thereof | 上海交通大学 | 2019-07-12 | — | — | CN | claimed |
| CN-107541203-A | Quantum dot of metal oxide/coated with silica or parcel and preparation method thereof | 上海交通大学 | 2018-01-05 | — | — | CN | claimed |
| CN-107474821-A | A kind of Silica-coated quantum dot and preparation method thereof | 上海交通大学 | 2017-12-15 | — | — | CN | claimed |
| CN-105670631-A | Self-passivating quantum dot and preparation method thereof | 上海交通大学 | 2016-06-15 | — | — | CN | claimed |
| CN-103149185-B | Novel high-efficiency protease activity detecting method | UNIV SOOCHOW | 2014-12-10 | — | — | CN | claimed |
| CN-103149185-A | Novel high-efficiency protease activity detecting method | UNIV SOOCHOW | 2013-06-12 | — | — | CN | claimed |
| JP-7326825-A | — | — | None | — | — | JP | disclosed |
| CN-117511538-A | UCNP-QD-GNP assembly nano probe and application thereof | 苏州大学 | 2024-02-06 | — | — | CN | disclosed |
| CN-117025223-A | Quantum dot coated with blue light absorption layer and preparation method thereof | 欣盛光电股份有限公司 | 2023-11-10 | — | — | CN | disclosed |
| CN-111504962-B | Method for detecting ions based on water-phase zinc-cadmium-selenium fluorescent quantum dots | 杭州电子科技大学 | 2022-11-11 | — | — | CN | disclosed |
| CN-111504962-B | Method for detecting ions based on water-phase zinc-cadmium-selenium fluorescent quantum dots | 杭州电子科技大学 | 2022-11-11 | — | — | CN | disclosed |
| WO-2012150965-A1 | VERTICAL TUNNELING NEGATIVE DIFFERENTIAL RESISTANCE DEVICES | INTEL CORPORATION (US) | 2012-11-08 | — | — | WO | disclosed |
| US-6024794-A | Determination of critical film thickness of a compound semiconductor layer, and a method for manufacturing a semiconductor device using the method of determination | SONY CORPORATION (JP) | 2000-02-15 | — | — | US | disclosed |
| CN-1199503-A | Fluorescent lamp with improved luminous efficiency | DU PONT (US) | 1998-11-18 | — | — | CN | disclosed |
| US-5695556-A | OBTAINING RELATIONSHIP BETWEEN FILM THICKNESS OF COMPOUND SEMICONDUCTOR LAYER AND PHOTOLUMINESCENCE INTENSITY, DESIGNATING AS SAID CRITICAL FILM THICKNESS THE THICKNESS WHERE PHOTOLUMINESCENCE EXHIBITS A PEAK | SONY CORPORATION (JP) | 1997-12-09 | — | — | US | disclosed |
| CN-1134606-A | Determination of critical film thickness of compound semiconductor layer, and method for manufacturing semiconductor device using the method of determination | SONY CORP (JP) | 1996-10-30 | — | — | CN | disclosed |
| JP-H07326825-A | SEMICONDUCTOR DEVICE OF II-VI COMPOUND SEMICONDUCTOR AND FORMING METHOD OF II-VI COMPOUND SEMICONDUCTOR LAYER | SONY CORP | 1995-12-12 | — | — | JP | disclosed |