Known targets — ChEMBL curated mechanism
The experimentally established mechanism targets of Lithium Ion. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL22673 | 0.89 | — | — | |
| SCHEMBL30516745 | 0.80 | — | — | |
| SCHEMBL15261531 | 0.80 | — | — | |
| SCHEMBL1282122 | 0.80 | — | — | |
| Lithium Ion SCHEMBL31510179 | 0.78 | — | — | |
| SCHEMBL31474378 | 0.78 | — | — | |
| SCHEMBL780273 | 0.78 | — | — | |
| Lithium Ion SCHEMBL30178 | 0.78 | — | — | |
| Lithium Ion SCHEMBL1981091 | 0.78 | — | — | |
| Lithium Ion SCHEMBL30065069 | 0.78 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-6090658-A | Method of forming a capacitor including a bottom silicon diffusion barrier layer and a top oxygen diffusion barrier layer | LG SEMICON CO., LTD. (KR) | 2000-07-18 | — | — | US | claimed |
| US-5792324-A | Method and apparatus of forming a thin film | LG SEMICON CO., LTD. (KR) | 1998-08-11 | — | — | US | claimed |
| US-6090658-A | Method of forming a capacitor including a bottom silicon diffusion barrier layer and a top oxygen diffusion barrier layer | LG SEMICON CO., LTD. (KR) | 2000-07-18 | — | — | US | disclosed |
| US-5879957-A | Method for manufacturing a capacitor | LG SEMICON CO., LTD. (KR) | 1999-03-09 | — | — | US | disclosed |
| US-5792324-A | Method and apparatus of forming a thin film | LG SEMICON CO., LTD. (KR) | 1998-08-11 | — | — | US | disclosed |