SCHEMBL8055657

SCHEMBL8055657

[GeH4].[Se][Se]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2449934 0.82
SCHEMBL2549666 0.67
SCHEMBL321740 0.67
SCHEMBL297341 0.67
SCHEMBL11388472 0.67
SCHEMBL297128 0.67
SCHEMBL10894172 0.67
SCHEMBL2549513 0.67
SCHEMBL7193846 0.67
SCHEMBL413433 0.67

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 70 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20250130108-A1 POLARIMETRIC SENSOR ARRAY FOR MACHINE VISION SYSTEMS WU YIMIN A (CA) 2025-04-24 US claimed
CN-119325261-B Bionic polarization vision chip device, preparation method thereof and convolutional neural network 松山湖材料实验室 2025-03-25 CN claimed
CN-118890953-A Application of 1T-phase van der Waals material, magnetic sensor and preparation method 浙江大学 2024-11-01 CN claimed
CN-117867637-B Method for preparing high-purity selenium germanium gallium barium polycrystal material for single crystal growth in one step by utilizing inclined single-temperature zone synthesis furnace 哈尔滨工业大学 2024-10-25 CN claimed
CN-117867649-B Method for purifying selenium germanium gallium barium polycrystal material and growing high-transmittance crystal by horizontal gradient crystallization method 哈尔滨工业大学 2024-10-18 CN claimed
CN-117867637-A Method for preparing high-purity selenium germanium gallium barium polycrystal material for single crystal growth in one step by utilizing inclined single-temperature zone synthesis furnace 哈尔滨工业大学 2024-04-12 CN claimed
CN-117867649-A Method for purifying selenium germanium gallium barium polycrystal material and growing high-transmittance crystal by horizontal gradient crystallization method 哈尔滨工业大学 2024-04-12 CN claimed
CN-117416930-A Preparation method of germanium diselenide 先导薄膜材料(安徽)有限公司 2024-01-19 CN claimed
CN-117164360-A Preparation method of high-density germanium diselenide target material 先导薄膜材料(安徽)有限公司 2023-12-05 CN claimed
CN-116752095-A Preparation method of gamma-phase germanium selenide nano-sheet 湘潭大学 2023-09-15 CN claimed
CN-115241198-A Memory device based on molybdenum disulfide/germanium diselenide heterojunction and preparation method thereof 浙江大学 2022-10-25 CN claimed
CN-112456452-B Preparation method of germanium diselenide nano material 湘潭大学 2022-08-05 CN claimed
CN-112456452-A Preparation method of germanium diselenide nano material 湘潭大学 2021-03-09 CN claimed
US-20200036037-A1 Electrodes Comprising Metal Introduced Into a Solid-State Electrolyte SIEMENS AKTIENGESELLSCHAFT (DE) 2020-01-30 US claimed
EP-0714966-B1 Luminescent screen with a phosphor composition PHILIPS CORP INTELLECTUAL PTY (DE) 2000-05-03 EP claimed
US-5684358-A Luminescent screen U.S. PHILIPS CORPORATION (US) 1997-11-04 US claimed
US-4252891-A Method of manufacturing embossed articles of preset configuration KOSTYSHIN MAXIM T 1981-02-24 US claimed
JP-8250034-A None JP disclosed
JP-H08250034-A DISPLAY SCREEN PHILIPS ELECTRON NV 1996-09-27 JP disclosed
US-4252891-A Method of manufacturing embossed articles of preset configuration KOSTYSHIN MAXIM T 1981-02-24 US disclosed