SCHEMBL8216620

SCHEMBL8216620

CCCCCCCCCC1CCC(C2CCC(C3CCC(CCCCC)CC3)CC2)CC1

nearest known ligand 0.52

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CYP1A2 P05177 5/20 0.52
EPHX1 P07099 1/20 0.46
HTT P42858 2/20 0.45
MEN1 O00255 2/20 0.45
KMT2A Q03164 2/20 0.45
ALDH1A1 P00352 1/20 0.44
TP53 P04637 1/20 0.42
LMNA P02545 1/20 0.42
MAPK1 P28482 1/20 0.42
LSS P48449 2/20 0.42
PKM P14618 1/20 0.42
TSHR P16473 1/20 0.40
THRB P10828 1/20 0.40
CYP2D6 P10635 1/20 0.40
CYP2C9 P11712 1/20 0.40
CYP2C19 P33261 1/20 0.40
GNAI3 P08754 1/20 0.39
GNAO1 P09471 1/20 0.39
GNAI1 P63096 1/20 0.39
SIGMAR1 Q99720 2/20 0.39

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL10704717 1.00 CYP1A2 (0.52) CYP1A2EPHX1HTTMEN1KMT2A
SCHEMBL8216890 1.00 CYP1A2 (0.52) CYP1A2EPHX1HTTMEN1KMT2A
SCHEMBL10486024 1.00 CYP1A2 (0.52) CYP1A2EPHX1HTTMEN1KMT2A
SCHEMBL10486199 1.00 CYP1A2 (0.52) CYP1A2EPHX1HTTMEN1KMT2A
SCHEMBL10485974 1.00 CYP1A2 (0.52) CYP1A2EPHX1HTTMEN1KMT2A
SCHEMBL10486181 1.00 CYP1A2 (0.52) CYP1A2EPHX1HTTMEN1KMT2A
SCHEMBL10706195 1.00 CYP1A2 (0.52) CYP1A2EPHX1HTTMEN1KMT2A
SCHEMBL10702696 1.00 CYP1A2 (0.52) CYP1A2EPHX1HTTMEN1KMT2A
SCHEMBL10703794 1.00 CYP1A2 (0.52) CYP1A2EPHX1HTTMEN1KMT2A
SCHEMBL8215790 1.00 CYP1A2 (0.52) CYP1A2EPHX1HTTMEN1KMT2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 1 patent. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6030545-A HAVING A REDUCED VISCOSITY, A WIDE LIQUID CRYSTAL TEMPERATURE RANGE (HIGH CLEARING POINT), A HIGH CHEMICAL STABILITY (EXTREMELY HIGH SPECIFIC RESISTANCE, HIGH VOLTAGE HOLDING RATIO) AND A HIGH SOLUBILITY WITH OTHER LIQUID-CRYSTAL CHISSO CORPORATION (JP) 2000-02-29 US disclosed