SCHEMBL825359

SCHEMBL825359

CCC(C)C(=O)Nc1ccc(OC(=O)c2ccccc2)cc1

nearest known ligand 0.56

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
KMT2A Q03164 6/20 0.56
MEN1 O00255 4/20 0.56
SMN1; SMN2 Q16637 5/20 0.51
HSD17B10 Q99714 1/20 0.51
CA1 P00915 1/20 0.50
CA2 P00918 1/20 0.50
CA7 P43166 1/20 0.50
CA14 Q9ULX7 1/20 0.50
EPHX2 P34913 1/20 0.48
ALDH1A1 P00352 5/20 0.48
MAPT P10636 2/20 0.48
HPGD P15428 2/20 0.48
THRB P10828 1/20 0.48
RXFP1 Q9HBX9 1/20 0.48
RAB9A P51151 4/20 0.48
HTT P42858 2/20 0.48
NPC1 O15118 2/20 0.48
LMNA P02545 2/20 0.48
TDP1 Q9NUW8 1/20 0.48
L3MBTL1 Q9Y468 1/20 0.48

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL12329947 0.83 NPY5R (0.64) SMN1; SMN2CA1CA2CA7CA14
SCHEMBL825436 0.81 KMT2A (0.54) KMT2AMEN1ALDH1A1MAPTHPGD
SCHEMBL4151615 0.81 MME (0.63) KMT2AMEN1SMN1; SMN2HSD17B10CA1
SCHEMBL12205972 0.81 MME (0.63) KMT2AMEN1SMN1; SMN2HSD17B10CA1
SCHEMBL18456226 0.81 MME (0.63) KMT2AMEN1SMN1; SMN2HSD17B10CA1
SCHEMBL825597 0.78 KMT2A (0.67) KMT2AMEN1SMN1; SMN2HSD17B10ALDH1A1
SCHEMBL825452 0.78 NPC1 (0.58) KMT2AMEN1SMN1; SMN2ALDH1A1MAPT
SCHEMBL12310233 0.78 TAAR1 (0.66) KMT2AMEN1SMN1; SMN2CA1CA2
SCHEMBL12125178 0.78 KMT2A (0.69) KMT2AMEN1SMN1; SMN2HSD17B10CA1
SCHEMBL2159024 0.78 KMT2A (0.72) KMT2AMEN1SMN1; SMN2HSD17B10ALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8142977-B2 mixture of resin which decomposes under acid under exposure to actinic radiation, acid generator FUJIFILM CORPORATION (JP) 2012-03-27 US disclosed
US-20080241749-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-10-02 US disclosed