SCHEMBL827746

SCHEMBL827746

O=C[Al](C=O)C=O

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL77804 0.59
SCHEMBL1227686 0.50
SCHEMBL8541273 0.50
Formic Acid SCHEMBL1494393 0.50
SCHEMBL18285 0.47
SCHEMBL35997 0.47
SCHEMBL724735 0.47
SCHEMBL23410643 0.43
SCHEMBL23458664 0.43
SCHEMBL23458655 0.43

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 43 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11362221-B2 Doped passivated contacts ALLIANCE FOR SUSTAINABLE ENERGY, LLC (US) 2022-06-14 US disclosed
EP-1616043-B1 TRANSIENT ENHANCED ATOMIC LAYER DEPOSITION EUGENUS INC (US) 2020-09-23 EP disclosed
US-20190245046-A1 High Electron Mobility Transistor Structure and Method of Making the Same TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2019-08-08 US disclosed
US-10283599-B2 High electron mobility transistor structure and method of making the same TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2019-05-07 US disclosed
US-10096690-B2 Circuit structure, transistor and semiconductor device TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2018-10-09 US disclosed
US-20180226521-A1 DOPED PASSIVATED CONTACTS Alliance for Energy Innovation, LLC 2018-08-09 US disclosed
US-10020361-B2 Circuit structure having islands between source and drain and circuit formed TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2018-07-10 US disclosed
US-20170338316-A1 High Electron Mobility Transistor Structure and Method of Making the Same TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2017-11-23 US disclosed
US-9728613-B2 High electron mobility transistor structure TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2017-08-08 US disclosed
US-20170133484-A1 CIRCUIT STRUCTURE, TRANSISTOR AND SEMICONDUCTOR DEVICE TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2017-05-11 US disclosed
US-20110281424-A1 Relaxed InGaN/AlGaN Templates PALO ALTO RESEARCH CENTER INCORPORATED (US) 2011-11-17 US disclosed
US-7981473-B2 Uniform film deposition; exposing wafer alternately to two different chemically reactive precursors under starved saturation conditions; rapid deposition rate, high throughput AIXTRON, INC. (US) 2011-07-19 US disclosed
US-20110150017-A1 Relaxed InGaN/AlGaN Templates PALO ALTO RESEARCH CENTER INCORPORATED (US) 2011-06-23 US disclosed
CN-101933103-A Powder for magnetic core, powder magnetic core, and their production methods TOYOTA MOTOR CO LTD 2010-12-29 CN disclosed
US-20080131601-A1 Transient enhanced atomic layer deposition EUGENUS, INC. 2008-06-05 US disclosed
CN-1795211-A Supported metallocene catalysts FINA TECHNOLOGY (US) 2006-06-28 CN disclosed
EP-1616043-A2 TRANSIENT ENHANCED ATOMIC LAYER DEPOSITION GENUS, INC. (US) 2006-01-18 EP disclosed
WO-2004094695-A2 TRANSIENT ENHANCED ATOMIC LAYER DEPOSITION GENUS, INC. (US) 2004-11-04 WO disclosed
CN-1053676-C Catalyst systems and process for producing broad molecular weight polyolefin PHILLIPS PETROLEUM CO (US) 2000-06-21 CN disclosed
CN-1123287-A Catalyst systems and process for producing broad molecular weight polyolefin PHILLIPS PETROLEUM CO (US) 1996-05-29 CN disclosed