SCHEMBL8370833

SCHEMBL8370833

BNN(C)C

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Trimethylammonium SCHEMBL8371792 0.71
Trimethylammonium SCHEMBL27663224 0.60
SCHEMBL170103 0.59
SCHEMBL1796257 0.59
SCHEMBL15241371 0.59
SCHEMBL10041774 0.56
Hydrochloric Acid SCHEMBL2253702 0.56
SCHEMBL3794951 0.56
Water SCHEMBL15334116 0.56
SCHEMBL13709649 0.56

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 9 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-4368223-A REDUCTION OF NICKEL COMPOUND FROM SOLUTION CONTAINING DIETHYLENETRIAMINE OR IMIDAZOLE ASAHI GLASS COMPANY, LTD. (JP) 1983-01-11 US claimed
WO-2023211934-A1 LIPIDS, FORMULATIONS, AND USES THEREOF THE REGENTS OF THE UNIVERSITY OF MICHIGAN (US) 2023-11-02 WO disclosed
EP-0692554-B1 Electroless plating bath used for forming a wiring of a semiconductor device, and method of forming a wiring of a semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO LTD (JP) 1999-01-20 EP disclosed
US-5795828-A Electroless plating bath used for forming a wiring of a semiconductor device, and method of forming a wiring of a semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 1998-08-18 US disclosed
US-5645628-A Electroless plating bath used for forming a wiring of a semiconductor device, and method of forming a wiring of a semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 1997-07-08 US disclosed
EP-0692554-A1 Electroless plating bath used for forming a wiring of a semiconductor device, and method of forming a wiring of a semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 1996-01-17 EP disclosed
EP-0066656-B1 PROCESS FOR PREPARING NICKEL LAYER ASAHI GLASS COMPANY LTD. (JP) 1985-09-25 EP disclosed
US-4368223-A REDUCTION OF NICKEL COMPOUND FROM SOLUTION CONTAINING DIETHYLENETRIAMINE OR IMIDAZOLE ASAHI GLASS COMPANY, LTD. (JP) 1983-01-11 US disclosed
EP-0066656-A1 Process for preparing nickel layer ASAHI GLASS COMPANY LTD. (JP) 1982-12-15 EP disclosed