SCHEMBL8433674

SCHEMBL8433674

CS(=O)(=O)Oc1ccc(C(=O)c2ccccc2)c(OS(C)(=O)=O)c1OS(C)(=O)=O

nearest known ligand 0.48

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
MAPT P10636 5/20 0.48
MAPK1 P28482 3/20 0.48
HSD17B10 Q99714 3/20 0.48
KDM4E B2RXH2 3/20 0.48
ALOX15 P16050 1/20 0.48
LMNA P02545 4/20 0.44
HTT P42858 2/20 0.44
SMN1; SMN2 Q16637 1/20 0.44
NPSR1 Q6W5P4 1/20 0.44
KMT2A Q03164 2/20 0.44
ALDH1A1 P00352 4/20 0.41
HPGD P15428 2/20 0.40
CYP1A2 P05177 2/20 0.40
ELANE P08246 2/20 0.40
PGR P06401 1/20 0.40
CYP2D6 P10635 1/20 0.40
SLC6A2 P23975 1/20 0.40
PDE4A P27815 1/20 0.40
CYP2C19 P33261 1/20 0.40
HRH1 P35367 1/20 0.40

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL8776808 0.87 MAPT (0.44) MAPTMAPK1HSD17B10KDM4EALOX15
SCHEMBL1617918 0.81 ELANE (0.55) MAPTMAPK1HSD17B10KDM4EALOX15
SCHEMBL926997 0.79 MAPT (0.42) MAPTMAPK1HSD17B10KDM4EALOX15
SCHEMBL5702433 0.79 HSD17B10 (0.43) MAPTMAPK1HSD17B10KDM4ELMNA
SCHEMBL7752008 0.78 MAPT (0.41) MAPTMAPK1HSD17B10KDM4EALOX15
SCHEMBL11057558 0.78 MAPT (0.58) MAPTMAPK1HSD17B10KDM4EALOX15
SCHEMBL929635 0.76 MAPT (0.43) MAPTMAPK1HSD17B10KDM4EALOX15
SCHEMBL8776805 0.76 FNTA (0.39) MAPTMAPK1HSD17B10KDM4EALOX15
SCHEMBL27456101 0.75 KMT2A (0.41) MAPTMAPK1HSD17B10KDM4ELMNA
SCHEMBL926963 0.75 MAPT (0.42) MAPTMAPK1HSD17B10KDM4EALOX15

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 11 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-5470996-A Pattern forming material and process for forming pattern using the same HITACHI, LTD. (JP) 1995-11-28 US claimed
US-5118582-A PATTERN FORMING MATERIAL AND PROCESS FOR FORMING PATTERN USING THE SAME HITACHI, LTD. (JP) 1992-06-02 US claimed
EP-0704762-B1 Resist material and pattern formation WAKO PURE CHEM IND LTD (JP) 1999-12-15 EP disclosed
EP-0388813-B1 Pattern forming material and process for forming pattern using the same HITACHI LTD (JP) 1997-12-10 EP disclosed
US-5558971-A HYDROXYSTYRENE POLYMER DERIVATIVES, PHOTOACID GENERATOR WAKO PURE CHEMICAL INDUSTRIES, LTD. (JP) 1996-09-24 US disclosed
US-5558976-A HYDROXYSTYRENE POLYMER DERIVATIVES, PHOTOACID GENERATOR, PHOTORESISTS WAKO PURE CHEMICAL INDUSTRIES, LTD. (JP) 1996-09-24 US disclosed
EP-0704762-A1 Resist material and pattern formation WAKO PURE CHEMICAL INDUSTRIES LTD (JP) 1996-04-03 EP disclosed
US-5470996-A Pattern forming material and process for forming pattern using the same HITACHI, LTD. (JP) 1995-11-28 US disclosed
EP-0510441-A1 Positive-working radiation-sensitive composition and radiation-sensitive recording material produced therewith HOECHST AKTIENGESELLSCHAFT (DE) 1992-10-28 EP disclosed
US-5118582-A PATTERN FORMING MATERIAL AND PROCESS FOR FORMING PATTERN USING THE SAME HITACHI, LTD. (JP) 1992-06-02 US disclosed
EP-0388813-A2 Pattern forming material and process for forming pattern using the same HITACHI, LTD. (JP) 1990-09-26 EP disclosed