SCHEMBL8510485

SCHEMBL8510485

[Ba+2].[Ba+2].[La+3].[La+3].[Mn+2].[Mn+2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL29383909 0.87
SCHEMBL1244921 0.87
SCHEMBL6686644 0.87
Water SCHEMBL83465 0.75
SCHEMBL8379376 0.75
SCHEMBL1981104 0.75
SCHEMBL145717 0.75
SCHEMBL7027076 0.75
Lithium Ion SCHEMBL21931567 0.75
SCHEMBL3629807 0.75

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 16 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-118317683-B Colossal magneto-resistance sensor, preparation method thereof and current sensor 南方电网数字电网研究院股份有限公司 2024-10-25 CN claimed
CN-118317683-A Colossal magneto-resistance sensor, preparation method thereof and current sensor 南方电网数字电网研究院股份有限公司 2024-07-09 CN claimed
CN-100383274-C Method for raising property of lanthanum barium manganese oxide film by laser irradiation UNIV BEIJING TECHNOLOGY (CN) 2008-04-23 CN claimed
CN-1869278-A Method for raising property of lanthanum barium manganese oxide film by laser irradiation UNIV BEIJING TECHNOLOGY (CN) 2006-11-29 CN claimed
US-5886523-A Magnetic field responsive device having giant magnetoresistive material and method for forming the same UNIVERSITY OF SHEFFIELD, THE WESTERN BANK 1999-03-23 US claimed
EP-0766831-A1 MAGNETIC FIELD RESPONSIVE DEVICE THE UNIVERSITY OF SHEFFIELD (GB) 1997-04-09 EP claimed
WO-1995035507-A1 MAGNETIC FIELD RESPONSIVE DEVICE THE UNIVERSITY OF SHEFFIELD (GB) 1995-12-28 WO claimed
CN-106252204-B A method of by huge magnetic resistance manganese-salt phosphating in graphics of nanometer dimension 复旦大学 2019-05-31 CN disclosed
CN-106591807-A Multiferroic composite magnetoelectric film and preparation method thereof 西安交通大学 2017-04-26 CN disclosed
CN-106252204-A A kind of by huge magnetic resistance manganese-salt phosphating in the method for graphics of nanometer dimension 复旦大学 2016-12-21 CN disclosed
CN-100383274-C Method for raising property of lanthanum barium manganese oxide film by laser irradiation UNIV BEIJING TECHNOLOGY (CN) 2008-04-23 CN disclosed
CN-100383274-C Method for raising property of lanthanum barium manganese oxide film by laser irradiation UNIV BEIJING TECHNOLOGY (CN) 2008-04-23 CN disclosed
CN-100365157-C Method for preparing La-Ba-Mn-o function film on silicon base plate UNIV BEIJING POLYTECHNIC (CN) 2008-01-30 CN disclosed
CN-1869278-A Method for raising property of lanthanum barium manganese oxide film by laser irradiation UNIV BEIJING TECHNOLOGY (CN) 2006-11-29 CN disclosed
CN-1869278-A Method for raising property of lanthanum barium manganese oxide film by laser irradiation UNIV BEIJING TECHNOLOGY (CN) 2006-11-29 CN disclosed
CN-1752268-A Method for preparing La-Ba-Mn-o function film on silicon base plate UNIV BEIJING POLYTECHNIC (CN) 2006-03-29 CN disclosed