SCHEMBL8610569

SCHEMBL8610569

N#[SiH].[Al+3].[N-3]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL4864530 0.91
SCHEMBL11687336 0.80
SCHEMBL7631956 0.80
SCHEMBL1004898 0.80
SCHEMBL109737 0.78
SCHEMBL5919708 0.73
SCHEMBL4101179 0.67
Methane SCHEMBL16671598 0.67
SCHEMBL1187518 0.67
SCHEMBL1531126 0.67

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 28 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-115945207-A Catalyst for hydrogen chloride oxidation and preparation method thereof 浙江工业大学 2023-04-11 CN claimed
CN-106380208-B High-thermal-conductivity silicon nitride-aluminum nitride complex-phase ceramic substrate for LED and preparation method thereof 广东创辉鑫材科技股份有限公司 2020-06-02 CN claimed
EP-0348026-B1 Diamond growth on a substrate using microwave energy DE BEERS IND DIAMOND (ZA) 1994-02-16 EP claimed
JP-10158067-A None JP disclosed
JP-8067567-A None JP disclosed
JP-8067569-A None JP disclosed
CN-118359449-A Silicon nitride-aluminum nitride/polymer composite material and preparation method thereof 海南大学 2024-07-19 CN disclosed
CN-117706810-A Mixed non-etching scandium-doped aluminum nitride electro-optical modulator and preparation method thereof 上海大学 2024-03-15 CN disclosed
CN-117706810-A Mixed non-etching scandium-doped aluminum nitride electro-optical modulator and preparation method thereof 上海大学 2024-03-15 CN disclosed
CN-116462526-A Aluminum nitride whisker reinforced aluminum nitride ceramic material for electronic parts 福建臻璟新材料科技有限公司 2023-07-21 CN disclosed
WO-2023107190-A1 ION EXCHANGE-FUNCTIONALIZED CATALYST SUPPORTS 1S1 ENERGY, INC. (US) 2023-06-15 WO disclosed
CN-1898358-A Oxynitride phosphor and light-emitting device FUJIKURA LTD (JP) 2007-01-17 CN disclosed
JP-H10158067-A SIALON-CONTAINING ALUMINA-CHROME COMPOSITE REFRACTORY AND ITS PRODUCTION TOSHIBA CERAMICS CO LTD 1998-06-16 JP disclosed
JP-H0867569-A THERMAL SHOCK-RESISTANT SILICON NITRIDE SINTERED COMPACT AND PRODUCTION THEREOF NISSAN MOTOR CO LTD 1996-03-12 JP disclosed
JP-H0867567-A CERAMIC SINTERED COMPACT AND PRODUCTION THEREOF NISSAN MOTOR CO LTD 1996-03-12 JP disclosed
US-4990208-A Multilayer; adhesive applied in ring pattern SEIKO EPSON CORPORATION, A JAPANESE CORPORATION (JP) 1991-02-05 US disclosed
US-4647546-A Polycrystalline cubic boron nitride compact MEGADIAMOND INDUSTRIES, INC. (US) 1987-03-03 US disclosed
EP-0133343-B1 GRANULAR SILICON CARBIDE ABRASIVE GRAIN COATED WITH REFRACTORY MATERIAL, METHOD OF MAKING THE SAME AND ARTICLES MADE THEREWITH MINNESOTA MINING AND MANUFACTURING COMPANY (US) 1987-01-28 EP disclosed
US-4505720-A METAL CARBIDE OR NITRIDE, VAPOR DEPOSITION MINNESOTA MINING AND MANUFACTURING COMPANY (US) 1985-03-19 US disclosed
EP-0133343-A1 Granular silicon carbide abrasive grain coated with refractory material, method of making the same and articles made therewith MINNESOTA MINING AND MANUFACTURING COMPANY (US) 1985-02-20 EP disclosed