Predicted protein targets (top 11)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | GABRR1 | P24046 | 4/20 | 0.38 |
| ▸ | GABRR2 | P28476 | 1/20 | 0.38 |
| ▸ | HTR2C | P28335 | 14/20 | 0.33 |
| ▸ | HTR2B | P41595 | 13/20 | 0.33 |
| ▸ | HTR2A | P28223 | 10/20 | 0.33 |
| ▸ | MAOB | P27338 | 2/20 | 0.33 |
| ▸ | SLC6A2 | P23975 | 2/20 | 0.31 |
| ▸ | SLC6A4 | P31645 | 2/20 | 0.31 |
| ▸ | SLC6A3 | Q01959 | 2/20 | 0.31 |
| ▸ | MEN1 | O00255 | 1/20 | 0.30 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL8630838 | 1.00 | GABRR1 (0.38) | GABRR1GABRR2HTR2CHTR2BHTR2A | |
| SCHEMBL20876404 | 0.81 | — | — | |
| SCHEMBL4788629 | 0.81 | — | — | |
| SCHEMBL6758042 | 0.67 | — | — | |
| SCHEMBL8749649 | 0.67 | — | — | |
| SCHEMBL13178820 | 0.67 | — | — | |
| SCHEMBL8215655 | 0.67 | — | — | |
| SCHEMBL8749617 | 0.67 | — | — | |
| SCHEMBL22241265 | 0.67 | — | — | |
| SCHEMBL764321 | 0.67 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 24 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-10303058-B2 | Pattern forming method, treating agent, electronic device, and method for manufacturing the same | FUJIFILM CORPORATION (JP) | 2019-05-28 | — | — | US | disclosed |
| US-9939729-B2 | Resist pattern-forming method | JSR CORPORATION (JP) | 2018-04-10 | — | — | US | disclosed |
| US-9939729-B2 | Resist pattern-forming method | JSR CORPORATION (JP) | 2018-04-10 | — | — | US | disclosed |
| US-9766547-B2 | Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, method of manufacturing electronic device using the same, and electronic device | FUJIFILM CORPORATION (JP) | 2017-09-19 | — | — | US | disclosed |
| US-9766547-B2 | Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, method of manufacturing electronic device using the same, and electronic device | FUJIFILM CORPORATION (JP) | 2017-09-19 | — | — | US | disclosed |
| US-9651863-B2 | Pattern forming method, active light sensitive or radiation sensitive resin composition, resist film, method for manufacturing electronic device, and electronic device | FUJIFILM CORPORATION (JP) | 2017-05-16 | — | — | US | disclosed |
| US-9651863-B2 | Pattern forming method, active light sensitive or radiation sensitive resin composition, resist film, method for manufacturing electronic device, and electronic device | FUJIFILM CORPORATION (JP) | 2017-05-16 | — | — | US | disclosed |
| US-20170075224-A1 | RESIST PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2017-03-16 | — | — | US | disclosed |
| US-20170075224-A1 | RESIST PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2017-03-16 | — | — | US | disclosed |
| US-20170059992-A1 | RESIST PATTERN-FORMING METHOD AND CHEMICALLY AMPLIFIED RADIATION-SENSITIVE RESIN COMPOSITION | JSR CORPORATION (JP) | 2017-03-02 | — | — | US | disclosed |
| US-20160195814-A1 | PATTERN FORMATION METHOD, ELECTRONIC-DEVICE PRODUCTION METHOD, AND PROCESSING AGENT | FUJIFILM CORPORATION (JP) | 2016-07-07 | — | — | US | disclosed |
| US-20160041465-A1 | PATTERN FORMING METHOD, ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE RESIN COMPOSITION, RESIST FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2016-02-11 | — | — | US | disclosed |
| US-20160041465-A1 | PATTERN FORMING METHOD, ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE RESIN COMPOSITION, RESIST FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2016-02-11 | — | — | US | disclosed |
| US-20160011517-A1 | PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, METHOD OF MANUFACTURING ELECTRONIC DEVICE USING THE SAME, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2016-01-14 | — | — | US | disclosed |
| US-20160011517-A1 | PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, METHOD OF MANUFACTURING ELECTRONIC DEVICE USING THE SAME, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2016-01-14 | — | — | US | disclosed |
| US-20100028803-A1 | SURFACE TREATING AGENT FOR RESIST PATTERN FORMATION, RESIST COMPOSITION, METHOD OF TREATING SURFACE OF RESIST PATTERN THEREWITH AND METHOD OF FORMING RESIST PATTERN | FUJIFILM CORPORATION (JP) | 2010-02-04 | — | — | US | disclosed |
| US-20100028803-A1 | SURFACE TREATING AGENT FOR RESIST PATTERN FORMATION, RESIST COMPOSITION, METHOD OF TREATING SURFACE OF RESIST PATTERN THEREWITH AND METHOD OF FORMING RESIST PATTERN | FUJIFILM CORPORATION (JP) | 2010-02-04 | — | — | US | disclosed |
| US-5817777-A | SEQUESTERING | AMERSHAM INTERNATIONAL PLC (GB) | 1998-10-06 | — | — | US | disclosed |
| EP-0668855-A1 | SUBSTITUTED CYCLOPENTANE COMPOUNDS FOR USE AS CHELATING AGENTS | AMERSHAM INTERNATIONAL plc (GB) | 1995-08-30 | — | — | EP | disclosed |
| WO-1994011339-A1 | SUBSTITUTED CYCLOPENTANE COMPOUNDS FOR USE AS CHELATING AGENTS | AMERSHAM INTERNATIONAL PLC (GB) | 1994-05-26 | — | — | WO | disclosed |