SCHEMBL8737714

SCHEMBL8737714

CC(CCC(=O)OCC(=O)OC(C)(C)C)C1CCC2C3C(O)CC4CC(O)CCC4(C)C3CC(O)C12C

nearest known ligand 0.75

Predicted protein targets (top 16)

geneUniProtsupporting neighboursconfidence
▸ CYP3A4 P08684 3/20 0.75
▸ KMT2A Q03164 2/20 0.75
▸ MEN1 O00255 1/20 0.75
▸ SLCO1B3 Q9NPD5 1/20 0.75
▸ SLCO1B1 Q9Y6L6 1/20 0.75
▸ USP2 O75604 1/20 0.75
▸ GPBAR1 Q8TDU6 9/20 0.71
▸ PDE3A Q14432 1/20 0.71
▸ NR1H4 Q96RI1 1/20 0.71
▸ ALDH1A1 P00352 1/20 0.69
▸ TDP1 Q9NUW8 1/20 0.69
▸ LMNA P02545 1/20 0.66
▸ CA1 P00915 2/20 0.65
▸ CA2 P00918 2/20 0.65
▸ ABCB11 O95342 1/20 0.64
▸ CYP8B1 Q9UNU6 1/20 0.63

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL19497256 1.00 CYP3A4 (0.75) CYP3A4KMT2AMEN1SLCO1B3SLCO1B1
SCHEMBL5443385 1.00 CYP3A4 (0.75) CYP3A4KMT2AMEN1SLCO1B3SLCO1B1
SCHEMBL13588255 0.94 CYP3A4 (0.82) CYP3A4KMT2AMEN1SLCO1B3SLCO1B1
SCHEMBL10084599 0.94 CYP3A4 (0.82) CYP3A4KMT2AMEN1SLCO1B3SLCO1B1
SCHEMBL19497228 0.94 CYP3A4 (0.82) CYP3A4KMT2AMEN1SLCO1B3SLCO1B1
SCHEMBL10084607 0.94 CYP3A4 (0.82) CYP3A4KMT2AMEN1SLCO1B3SLCO1B1
SCHEMBL131961 0.94 CYP3A4 (0.82) CYP3A4KMT2AMEN1SLCO1B3SLCO1B1
SCHEMBL460328 0.94 CYP3A4 (0.82) CYP3A4KMT2AMEN1SLCO1B3SLCO1B1
SCHEMBL14357805 0.91 GPBAR1 (0.69) CYP3A4KMT2AMEN1SLCO1B3SLCO1B1
SCHEMBL5441009 0.91 CYP3A4 (0.88) CYP3A4KMT2AMEN1SLCO1B3SLCO1B1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 29 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2414896-B1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORP (JP) 2020-11-11 — — EP disclosed
EP-2356516-B1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE COMPOSITION FUJIFILM CORP (JP) 2017-10-25 — — EP disclosed
EP-2356517-B1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORP (JP) 2017-01-25 — — EP disclosed
US-20160209747-A1 ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE COMPOSITION, AND RESIST FILM, PATTERN FORMING METHOD, RESIST-COATED MASK BLANK, METHOD FOR PRODUCING PHOTOMASK, PHOTOMASK, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE, EACH OF WHICH USES SAID ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE COMPOSITION FUJIFILM CORPORATION (JP) 2016-07-21 — — US disclosed
US-20160209747-A1 ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE COMPOSITION, AND RESIST FILM, PATTERN FORMING METHOD, RESIST-COATED MASK BLANK, METHOD FOR PRODUCING PHOTOMASK, PHOTOMASK, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE, EACH OF WHICH USES SAID ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE COMPOSITION FUJIFILM CORPORATION (JP) 2016-07-21 — — US disclosed
US-9152048-B2 Actinic-ray- or radiation-sensitive resin composition and method of forming pattern using the composition FUJIFILM CORPORATION (JP) 2015-10-06 — — US disclosed
US-9152048-B2 Actinic-ray- or radiation-sensitive resin composition and method of forming pattern using the composition FUJIFILM CORPORATION (JP) 2015-10-06 — — US disclosed
US-8846290-B2 Actinic ray-sensitive or radiation-sensitive resin composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2014-09-30 — — US disclosed
US-8846290-B2 Actinic ray-sensitive or radiation-sensitive resin composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2014-09-30 — — US disclosed
US-8795944-B2 Actinic ray-sensitive or radiation-sensitive resin composition and pattern forming method using the composition FUJIFILM CORPORATION (JP) 2014-08-05 — — US disclosed
US-20110236828-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2011-09-29 — — US disclosed
US-20110236828-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2011-09-29 — — US disclosed
US-20110091809-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2011-04-21 — — US disclosed
US-20110091809-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2011-04-21 — — US disclosed
WO-2011024734-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST FILM AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2011-03-03 — — WO disclosed
WO-2010114107-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2010-10-07 — — WO disclosed
US-20100183980-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2010-07-22 — — US disclosed
US-20100183980-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2010-07-22 — — US disclosed
WO-2010067898-A2 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2010-06-17 — — WO disclosed
WO-2010067905-A2 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2010-06-17 — — WO disclosed
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