⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL4901237 | 0.82 | — | — | |
| SCHEMBL560632 | 0.82 | — | — | |
| SCHEMBL3875947 | 0.82 | — | — | |
| SCHEMBL2122640 | 0.82 | — | — | |
| SCHEMBL1271233 | 0.67 | — | — | |
| SCHEMBL887624 | 0.67 | — | — | |
| SCHEMBL560998 | 0.67 | — | — | |
| SCHEMBL338148 | 0.67 | — | — | |
| SCHEMBL2034520 | 0.67 | — | — | |
| SCHEMBL9424157 | 0.67 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 150 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8513051-B2 | Methods of forming phase-changeable memory devices including an adiabatic layer | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2013-08-20 | — | — | US | claimed |
| US-20100144087-A1 | METHODS OF FORMING PHASE-CHANGEABLE MEMORY DEVICES INCLUDING AN ADIABATIC LAYER | HA YONG-HO | 2010-06-10 | — | — | US | claimed |
| US-20100096609-A1 | PHASE CHANGE MEMORY DEVICE HAVING A LAYERED PHASE CHANGE LAYER COMPOSED OF MULTIPLE PHASE CHANGE MATERIALS AND METHOD FOR MANUFACTURING THE SAME | HYNIX SEMICONDUCTOR INC. (KR) | 2010-04-22 | — | — | US | claimed |
| US-7692176-B2 | Phase-changeable memory devices including an adiabatic layer | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2010-04-06 | — | — | US | claimed |
| US-7563639-B2 | Phase-changeable memory device and method of manufacturing the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2009-07-21 | — | — | US | claimed |
| US-20070243659-A1 | PHASE-CHANGEABLE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2007-10-18 | — | — | US | claimed |
| US-20060039192-A1 | Phase-changeable memory devices including an adiabatic layer and methods of forming the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2006-02-23 | — | — | US | claimed |
| CN-107123661-B | Variable resistance memory device and semiconductor device | 三星电子株式会社 | 2023-06-06 | — | — | CN | disclosed |
| US-10593874-B2 | Variable resistance memory devices and methods of manufacturing the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2020-03-17 | — | — | US | disclosed |
| US-20180342672-A1 | VARIABLE RESISTANCE MEMORY DEVICES AND METHODS OF MANUFACTURING THE SAME | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2018-11-29 | — | — | US | disclosed |
| US-10062840-B2 | Variable resistance memory devices and methods of manufacturing the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2018-08-28 | — | — | US | disclosed |
| CN-107123661-A | Variable resistance memory device and semiconductor devices | 三星电子株式会社 | 2017-09-01 | — | — | CN | disclosed |
| US-20170250339-A1 | VARIABLE RESISTANCE MEMORY DEVICES AND METHODS OF MANUFACTURING THE SAME | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2017-08-31 | — | — | US | disclosed |
| US-20060098472-A1 | Nonvolatile memory device, array of nonvolatile memory devices, and methods of making the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2006-05-11 | — | — | US | disclosed |
| US-20060076641-A1 | Methods of fabricating phase changeable semiconductor memory devices including multi-plug conductive structures and related devices | SAMSUNG ELECTRONICS CO., LTD. | 2006-04-13 | — | — | US | disclosed |
| US-20060039192-A1 | Phase-changeable memory devices including an adiabatic layer and methods of forming the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2006-02-23 | — | — | US | disclosed |
| US-20060040485-A1 | Method of forming via structures and method of fabricating phase change memory devices incorporating such via structures | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2006-02-23 | — | — | US | disclosed |
| CN-1738022-A | Method of forming via structure and method of fabricating phase change memory device having the same | SAMSUNG ELECTRONICS CO LTD (KR) | 2006-02-22 | — | — | CN | disclosed |
| US-20060030108-A1 | Semiconductor device and method of fabricating the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2006-02-09 | — | — | US | disclosed |
| US-20050174861-A1 | Phase-change memory device and method of manufacturing the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2005-08-11 | — | — | US | disclosed |