SCHEMBL8896579

SCHEMBL8896579

[Al].[Co].[Fe].[SiH4]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL8896588 1.00
SCHEMBL9435346 0.89
SCHEMBL30661088 0.87
SCHEMBL11412395 0.87
SCHEMBL196012 0.87
SCHEMBL30999765 0.87
SCHEMBL6129113 0.87
SCHEMBL3801632 0.87
SCHEMBL952923 0.87
SCHEMBL3801633 0.87

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 20 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-3682483-B1 SEMICONDUCTOR DEVICES WITH METAL CONTACTS INCLUDING CRYSTALLINE ALLOYS INTEL CORP (US) 2025-12-03 EP claimed
US-11056593-B2 Semiconductor devices with metal contacts including crystalline alloys INTEL CORPORATION (US) 2021-07-06 US claimed
CN-112635653-A Magnetic tunnel junction structure and magnetic storage unit thereof 上海磁宇信息科技有限公司 2021-04-09 CN claimed
EP-3682483-A1 SEMICONDUCTOR DEVICES WITH METAL CONTACTS INCLUDING CRYSTALLINE ALLOYS INTEL Corporation (US) 2020-07-22 EP claimed
US-20200152781-A1 SEMICONDUCTOR DEVICES WITH METAL CONTACTS INCLUDING CRYSTALLINE ALLOYS INTEL CORPORATION (US) 2020-05-14 US claimed
CN-111095564-A Semiconductor device having metal contacts comprising crystalline alloy 英特尔公司 2020-05-01 CN claimed
WO-2019054989-A1 SEMICONDUCTOR DEVICES WITH METAL CONTACTS INCLUDING CRYSTALLINE ALLOYS INTEL CORPORATION (US) 2019-03-21 WO claimed
EP-3682483-B1 SEMICONDUCTOR DEVICES WITH METAL CONTACTS INCLUDING CRYSTALLINE ALLOYS INTEL CORP (US) 2025-12-03 EP disclosed
US-11056593-B2 Semiconductor devices with metal contacts including crystalline alloys INTEL CORPORATION (US) 2021-07-06 US disclosed
CN-112635653-A Magnetic tunnel junction structure and magnetic storage unit thereof 上海磁宇信息科技有限公司 2021-04-09 CN disclosed
EP-3682483-A1 SEMICONDUCTOR DEVICES WITH METAL CONTACTS INCLUDING CRYSTALLINE ALLOYS INTEL Corporation (US) 2020-07-22 EP disclosed
US-20200152781-A1 SEMICONDUCTOR DEVICES WITH METAL CONTACTS INCLUDING CRYSTALLINE ALLOYS INTEL CORPORATION (US) 2020-05-14 US disclosed
CN-111095564-A Semiconductor device having metal contacts comprising crystalline alloy 英特尔公司 2020-05-01 CN disclosed
WO-2019054989-A1 SEMICONDUCTOR DEVICES WITH METAL CONTACTS INCLUDING CRYSTALLINE ALLOYS INTEL CORPORATION (US) 2019-03-21 WO disclosed
EP-2540850-B1 ALUMINUM ALLOY CONDUCTOR FURUKAWA ELECTRIC CO LTD (JP) 2017-11-15 EP disclosed
EP-0401835-B1 A magnetic material MATSUSHITA ELECTRIC INDUSTRIAL CO LTD (JP) 1997-08-13 EP disclosed
US-5350628-A Magnetic sintered composite material MATSUSHITA ELECTRIC INDUSTRIAL COMPANY, INC. (JP) 1994-09-27 US disclosed
US-5238507-A MAGNETIC MATERIAL MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 1993-08-24 US disclosed
EP-0401835-A1 A magnetic material MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 1990-12-12 EP disclosed
US-3958987-A HEAT RESISTANCE SOUTHWIRE COMPANY (US) 1976-05-25 US disclosed