SCHEMBL8966909

SCHEMBL8966909

COB(F)F

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL22856974 0.74
SCHEMBL265090 0.74
Methoxymethane SCHEMBL47851 0.71
SCHEMBL1717638 0.70
SCHEMBL5414413 0.70
Ammonia Solution, Strong SCHEMBL10932576 0.67
SCHEMBL6325345 0.67
SCHEMBL9631220 0.67
Ammonia Solution, Strong SCHEMBL5051984 0.67
Phosphine SCHEMBL18603257 0.67

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 21 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-116315086-A Electrolyte and lithium ion battery 珠海冠宇电池股份有限公司 2023-06-23 CN disclosed
WO-2022126463-A1 TWO-PART EPOXY-BASED STRUCTURAL ADHESIVE COMPOSITION HENKEL AG & CO. KGAA (DE) 2022-06-23 WO disclosed
WO-2022051893-A1 SILICONE COPOLYMERS, THEIR PREPARATION AND THEIR USE FOR THE TREATMENT OF FIBROUS SUBSTRATES WACKER CHEMIE AG (DE) 2022-03-17 WO disclosed
US-10941332-B2 Anti-corrosion formulations with storage stability ARKEMA FRANCE (FR) 2021-03-09 US disclosed
CN-106158935-B Vertical transistor and its manufacturing method 台湾积体电路制造股份有限公司 2019-04-26 CN disclosed
CN-106887522-B Include the device of nanocrystal 默克专利有限公司 2018-09-18 CN disclosed
WO-2018018462-A1 STABILISER FOR POLYOLEFIN-IN-POLYETHER POLYOL DISPERSIONS BASF SE (DE) 2018-02-01 WO disclosed
CN-106887522-A Device comprising nanocrystal 默克专利有限公司 2017-06-23 CN disclosed
CN-106158935-A Vertical transistor and manufacture method thereof 台湾积体电路制造股份有限公司 2016-11-23 CN disclosed
CN-105826390-A Transistor device, electronic device and method for forming transistor device 英特尔公司 2016-08-03 CN disclosed
CN-103270598-A Contact resistance reduction using germanium capping layer pre-contact metallization INTEL CORP 2013-08-28 CN disclosed
EP-0519496-B1 Thermosetting copolymers, silicon carbide-based fiber and processes for producing same TONEN CORP (JP) 1996-05-22 EP disclosed
EP-0404503-B1 Boron-containing, silicon nitride-based ceramic shaped body production process TONEN CORP (JP) 1996-03-06 EP disclosed
EP-0389084-B1 Process for producing a polyborosilazane TONEN CORP (JP) 1995-09-20 EP disclosed
US-5292830-A Silane, silazane, boron block crosslinked copolymers TONEN CORPORATION (JP) 1994-03-08 US disclosed
EP-0519496-A1 Thermosetting copolymers, silicon carbide-based fiber and processes for producing same Tonen Corporation (JP) 1992-12-23 EP disclosed
US-5128286-A BORON-CONTAINING, SILICON NITRIDE-BASED CERAMIC SHAPED BODY TONEN CORPORATION (JP) 1992-07-07 US disclosed
US-5030744-A Polyborosilazane and process for producing same TONEN CORPORATION (JP) 1991-07-09 US disclosed
EP-0404503-A1 Boron-containing, silicon nitride-based ceramic shaped body production process Tonen Corporation (JP) 1990-12-27 EP disclosed
EP-0389084-A2 Process for producing a polyborosilazane Tonen Corporation (JP) 1990-09-26 EP disclosed