⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL28202775 | 0.71 | — | — | |
| SCHEMBL29354192 | 0.71 | — | — | |
| SCHEMBL30753794 | 0.71 | — | — | |
| Selenium SCHEMBL7732281 | 0.71 | — | — | |
| Hydrogen Sulfide SCHEMBL20603104 | 0.71 | — | — | |
| SCHEMBL14829129 | 0.71 | — | — | |
| SCHEMBL555198 | 0.50 | — | — | |
| SCHEMBL2004517 | 0.50 | — | — | |
| Hydrochloric Acid SCHEMBL37300 | 0.50 | — | — | |
| SCHEMBL230304 | 0.50 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 23 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9337421-B2 | Multi-layered phase-change memory device | FENG CHIA UNIVERSITY (TW) | 2016-05-10 | — | — | US | claimed |
| US-20130292631-A1 | Multi-Layered Phase-Change Memory Device | FENG CHIA UNIVERSITY (TW) | 2013-11-07 | — | — | US | claimed |
| US-20260129832-A1 | SEMICONDUCTOR DEVICE WITH VERTICAL CHANNEL LAYER AND METHOD FOR FABRICATING THE SAME | NANYA TECHNOLOGY CORP (TW) | 2026-05-07 | — | — | US | disclosed |
| US-20260129833-A1 | SEMICONDUCTOR DEVICE WITH VERTICAL CHANNEL LAYER AND METHOD FOR FABRICATING THE SAME | NANYA TECHNOLOGY CORP (TW) | 2026-05-07 | — | — | US | disclosed |
| US-20260129831-A1 | SEMICONDUCTOR DEVICE WITH VERTICAL CHANNEL LAYER AND METHOD FOR FABRICATING THE SAME | NANYA TECHNOLOGY CORP (TW) | 2026-05-07 | — | — | US | disclosed |
| US-20250385130-A1 | SEMICONDUCTOR DEVICE WITH POROUS LAYER AND METHOD FOR FABRICATING THE SAME | NANYA TECHNOLOGY CORP (TW) | 2025-12-18 | — | — | US | disclosed |
| US-20250385129-A1 | SEMICONDUCTOR DEVICE WITH POROUS LAYER AND METHOD FOR FABRICATING THE SAME | NANYA TECHNOLOGY CORP (TW) | 2025-12-18 | — | — | US | disclosed |
| CN-112687662-B | Semiconductor element and method for manufacturing the same | 南亚科技股份有限公司 | 2024-03-15 | — | — | CN | disclosed |
| US-11824082-B2 | Method for fabricating semiconductor device with capacitors having shared electrode | NANYA TECHNOLOGY CORPORATION (TW) | 2023-11-21 | — | — | US | disclosed |
| US-11605703-B2 | Semiconductor device with capacitors having shared electrode and method for fabricating the same | NANYA TECHNOLOGY CORPORATION (TW) | 2023-03-14 | — | — | US | disclosed |
| US-20220262894-A1 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE WITH CAPACITORS HAVING SHARED ELECTRODE | NANYA TECHNOLOGY CORPORATION (TW) | 2022-08-18 | — | — | US | disclosed |
| US-11315869-B1 | Semiconductor device with decoupling unit and method for fabricating the same | NANYA TECHNOLOGY CORPORATION (TW) | 2022-04-26 | — | — | US | disclosed |
| US-11145605-B2 | Semiconductor device and method for fabricating the same | NANYA TECHNOLOGY CORPORATION (TW) | 2021-10-12 | — | — | US | disclosed |
| US-20210118813-A1 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME | NANYA TECHNOLOGY CORPORATION (TW) | 2021-04-22 | — | — | US | disclosed |
| CN-112687662-A | Semiconductor element and method for manufacturing the same | 南亚科技股份有限公司 | 2021-04-20 | — | — | CN | disclosed |
| US-9337421-B2 | Multi-layered phase-change memory device | FENG CHIA UNIVERSITY (TW) | 2016-05-10 | — | — | US | disclosed |
| CN-103390724-B | Ultra-thin and multi-layer structure phase change memory component | FENG CHIA UNIVERSITY (CN) | 2016-04-06 | — | — | CN | disclosed |
| CN-103390724-A | Ultra-thin and multi-layer structure phase change memory component | UNIV FENG CHIA | 2013-11-13 | — | — | CN | disclosed |
| US-20130292631-A1 | Multi-Layered Phase-Change Memory Device | FENG CHIA UNIVERSITY (TW) | 2013-11-07 | — | — | US | disclosed |
| EP-0697616-A2 | Electro-optical fluid composition, device, and fabrication method thereof | FUJIKURA LTD. (JP) | 1996-02-21 | — | — | EP | disclosed |