⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL9550994 | 1.00 | — | — | |
| SCHEMBL18300386 | 0.87 | — | — | |
| SCHEMBL6856191 | 0.87 | — | — | |
| SCHEMBL31368627 | 0.82 | — | — | |
| SCHEMBL21802721 | 0.82 | KDM3A (0.50) | — | |
| SCHEMBL9700329 | 0.82 | KDM3A (0.50) | — | |
| SCHEMBL29879169 | 0.82 | — | — | |
| SCHEMBL4429868 | 0.82 | — | — | |
| SCHEMBL139857 | 0.82 | — | — | |
| SCHEMBL19471502 | 0.82 | KDM3A (0.50) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 20 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-101834139-A | Method for preparing polycrystalline silicon thin film based on metal induction | GUANGDONG SINODISPLAY TECH CO | 2010-09-15 | — | — | CN | claimed |
| CN-101834138-A | Method for preparing transistor device of crystallized thin film | GUANGDONG SINODISPLAY TECH CO | 2010-09-15 | — | — | CN | claimed |
| US-5552180-A | OXIDATION RESISTANCE | PPG INDUSTRIES, INC. (US) | 1996-09-03 | — | — | US | claimed |
| CN-113990956-B | SiC-based scalable MPS device | 意法半导体股份有限公司 | 2026-02-27 | — | — | CN | disclosed |
| US-20260047510-A1 | PICK AND PLACE FABRICATION USING THIN FILM COMPONENTS | BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC. (US) | 2026-02-12 | — | — | US | disclosed |
| CN-119866095-A | Preparation method of wet etching copper grid line | 苏州捷得宝机电设备有限公司 | 2025-04-22 | — | — | CN | disclosed |
| CN-113903665-B | Semiconductor structure and forming method thereof | 中芯国际集成电路制造(上海)有限公司 | 2025-01-14 | — | — | CN | disclosed |
| CN-113838933-B | Semiconductor structure and forming method thereof | 中芯国际集成电路制造(上海)有限公司 | 2024-08-20 | — | — | CN | disclosed |
| CN-116798861-A | Dynamic surface scanning method and system based on pyrometer | 北京华卓精科科技股份有限公司 | 2023-09-22 | — | — | CN | disclosed |
| CN-112366273-B | Preparation method of ZnO thin film electric exciter with linear adjustable piezoelectric property on flexible substrate | 赣州优膜科技有限公司 | 2023-04-18 | — | — | CN | disclosed |
| CN-112366273-A | Preparation method of ZnO thin film electric exciter with linear adjustable piezoelectric property on flexible substrate | 赣州优膜科技有限公司 | 2021-02-12 | — | — | CN | disclosed |
| CN-110838542-A | Resistive memory element and manufacturing method thereof | 旺宏电子股份有限公司 | 2020-02-25 | — | — | CN | disclosed |
| CN-104425423-B | Semiconductor device with a plurality of transistors | 瑞萨电子株式会社 | 2020-01-17 | — | — | CN | disclosed |
| US-9231209-B2 | Nanocomposite material, tunable resistor device, and method | VANDERBILT UNIVERSITY (US) | 2016-01-05 | — | — | US | disclosed |
| US-20140138601-A1 | NANOCOMPOSITE MATERIAL, TUNABLE RESISTOR DEVICE, AND METHOD | Vanderbilt Unviersity (US) | 2014-05-22 | — | — | US | disclosed |
| CN-101834211-A | Polycrystalline silicon thin film based on metal induction | GUANGDONG SINODISPLAY TECH CO | 2010-09-15 | — | — | CN | disclosed |
| CN-101834212-A | Transistor device of crystallized thin film | GUANGDONG SINODISPLAY TECH CO | 2010-09-15 | — | — | CN | disclosed |
| CN-101834139-A | Method for preparing polycrystalline silicon thin film based on metal induction | GUANGDONG SINODISPLAY TECH CO | 2010-09-15 | — | — | CN | disclosed |
| CN-101834138-A | Method for preparing transistor device of crystallized thin film | GUANGDONG SINODISPLAY TECH CO | 2010-09-15 | — | — | CN | disclosed |
| CN-101179013-A | Preparation method of self slow-release metal inducing crystallization polycrystalline silicon thin film material and applications | UNIV NANKAI (CN) | 2008-05-14 | — | — | CN | disclosed |