SCHEMBL9154587

SCHEMBL9154587

FC1=C(F)C(F)(F)SC1(F)F

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1482242 0.61
SCHEMBL3943475 0.61
SCHEMBL9471431 0.52
SCHEMBL3945457 0.52
SCHEMBL274532 0.52
SCHEMBL18148592 0.51
SCHEMBL88190 0.51
SCHEMBL1758633 0.48
SCHEMBL2811107 0.46
SCHEMBL17796889 0.46

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 37 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11814561-B2 Dry etching gas composition comprising sulfur-containing fluorocarbon compound having unsaturated bond and dry etching method using the same KANTO DENKA KOGYO CO., LTD. (JP) 2023-11-14 US claimed
US-11795396-B2 Dry etching gas composition comprising sulfur-containing fluorocarbon compound having unsaturated bond and dry etching method using the same KANTO DENKA KOGYO CO., LTD. (JP) 2023-10-24 US claimed
US-20220310407-A1 ETCHING GAS COMPOSITIONS, METHODS OF FORMING MICROPATTERNS, AND METHODS OF MANUFACTURING SEMICONDUCTOR DEVICE Wonik Materials (KR) 2022-09-29 US claimed
US-10872784-B2 Etching gas mixture, method of forming pattern by using the same, and method of manufacturing integrated circuit device by using the etching gas mixture SAMSUNG ELECTRONICS CO., LTD. (KR) 2020-12-22 US claimed
US-20200388881-A1 SILICON-BASED ENERGY STORAGE DEVICES WITH FUNCTIONAL THIOPHENE COMPOUNDS OR DERIVATIVES OF THIOPHENE CONTAINING ELECTROLYTE ADDITIVES ENEVATE CORPORATION 2020-12-10 US claimed
EP-0557272-B1 PROCESS FOR THE PREPARATION OF DIFLUOROMALEIC ANHYDRIDE AND INTERMEDIATE COMPOUNDS PRODUCED THEREBY DU PONT (US) 1995-03-08 EP claimed
EP-0557272-A1 PROCESS FOR THE PREPARATION OF DIFLUOROMALEIC ANHYDRIDE AND INTERMEDIATE COMPOUNDS PRODUCED THEREBY. DU PONT (US) 1993-09-01 EP claimed
WO-1992008710-A1 PROCESS FOR THE PREPARATION OF DIFLUOROMALEIC ANHYDRIDE AND INTERMEDIATE COMPOUNDS PRODUCED THEREBY E.I. DU PONT DE NEMOURS AND COMPANY (US) 1992-05-29 WO claimed
US-5112993-A Process for the preparation of difluoromaleic anhydride E. I. DU PONT DE NEMOURS AND COMPANY (US) 1992-05-12 US claimed
US-12183591-B2 Etching gas compositions, methods of forming micropatterns, and methods of manufacturing semiconductor device SAMSUNG ELECTRONICS CO., LTD. (KR) 2024-12-31 US disclosed
US-20240234031-A1 SEMICONDUCTOR DEVICE AND SEMICONDUCTOR APPARATUS AND ELECTRONIC APPARATUS INCLUDING THE SAME SAMSUNG ELECTRONICS CO., LTD. (KR) 2024-07-11 US disclosed
US-11814561-B2 Dry etching gas composition comprising sulfur-containing fluorocarbon compound having unsaturated bond and dry etching method using the same KANTO DENKA KOGYO CO., LTD. (JP) 2023-11-14 US disclosed
US-11814561-B2 Dry etching gas composition comprising sulfur-containing fluorocarbon compound having unsaturated bond and dry etching method using the same KANTO DENKA KOGYO CO., LTD. (JP) 2023-11-14 US disclosed
US-11795396-B2 Dry etching gas composition comprising sulfur-containing fluorocarbon compound having unsaturated bond and dry etching method using the same KANTO DENKA KOGYO CO., LTD. (JP) 2023-10-24 US disclosed
US-5235069-A Process for the preparation of difluoromaleic anhydride and intermediate compounds produced thereby E. I. DU PONT DE NEMOURS AND COMPANY (US) 1993-08-10 US disclosed
US-5235069-A Process for the preparation of difluoromaleic anhydride and intermediate compounds produced thereby E. I. DU PONT DE NEMOURS AND COMPANY (US) 1993-08-10 US disclosed
WO-1992008710-A1 PROCESS FOR THE PREPARATION OF DIFLUOROMALEIC ANHYDRIDE AND INTERMEDIATE COMPOUNDS PRODUCED THEREBY E.I. DU PONT DE NEMOURS AND COMPANY (US) 1992-05-29 WO disclosed
WO-1992008710-A1 PROCESS FOR THE PREPARATION OF DIFLUOROMALEIC ANHYDRIDE AND INTERMEDIATE COMPOUNDS PRODUCED THEREBY E.I. DU PONT DE NEMOURS AND COMPANY (US) 1992-05-29 WO disclosed
US-5112993-A Process for the preparation of difluoromaleic anhydride E. I. DU PONT DE NEMOURS AND COMPANY (US) 1992-05-12 US disclosed
US-5112993-A Process for the preparation of difluoromaleic anhydride E. I. DU PONT DE NEMOURS AND COMPANY (US) 1992-05-12 US disclosed