⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL27863069 | 0.89 | — | — | |
| SCHEMBL916266 | 0.89 | — | — | |
| SCHEMBL8587143 | 0.80 | — | — | |
| SCHEMBL15844288 | 0.80 | — | — | |
| SCHEMBL29004170 | 0.80 | — | — | |
| SCHEMBL2341724 | 0.80 | — | — | |
| SCHEMBL917950 | 0.80 | — | — | |
| SCHEMBL917079 | 0.80 | — | — | |
| SCHEMBL21836733 | 0.80 | — | — | |
| SCHEMBL999554 | 0.80 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 38 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-102569025-B | Epitaxial substrate, semiconductor light emitting element using the same and manufacturing process | KUNSHAN SINO SILICON TECHNOLOGY CO LTD | 2014-12-24 | — | — | CN | claimed |
| CN-102569025-A | Epitaxial substrate, semiconductor light emitting element using the same and manufacturing process | KUNSHAN SINO SILICON TECHNOLOGY CO LTD | 2012-07-11 | — | — | CN | claimed |
| US-7863164-B2 | Method of growing GaN using CVD and HVPE | Natioal Sun Yat-Sen University (TW) | 2011-01-04 | — | — | US | claimed |
| US-20100248461-A1 | Method of growing GaN using CVD and HVPE | NATIONAL SUN YAT-SEN UNIVERSITY (TW) | 2010-09-30 | — | — | US | claimed |
| US-20080233415-A1 | Structure of LiAlO2 substrate having ZnO buffer layer | NATIONAL SUN YAT-SEN UNIVERSITY (TW) | 2008-09-25 | — | — | US | claimed |
| US-20080233671-A1 | Method of fabricating GaN LED | NATIONAL SUN YAT-SEN UNIVERSITY (TW) | 2008-09-25 | — | — | US | claimed |
| US-20080231172-A1 | Light emitting device using phosphor powder | NATIONAL SUN YAT-SEN UNIVERSITY (TW) | 2008-09-25 | — | — | US | claimed |
| US-5625202-A | Modified wurtzite structure oxide compounds as substrates for III-V nitride compound semiconductor epitaxial thin film growth | UNIVERSITY OF CENTRAL FLORIDA (US) | 1997-04-29 | — | — | US | claimed |
| WO-1996042114-A1 | MODIFIED WURTZITE STRUCTURE OXIDE COMPOUNDS AS SUBSTRATES FOR III-V NITRIDE COMPOUND SEMICONDUCTOR EPITAXIAL THIN FILM GROWTH | UNIVERSITY OF CENTRAL FLORIDA (US) | 1996-12-27 | — | — | WO | claimed |
| CN-102790152-B | Brilliant base material of heap of stone and manufacture method thereof | KUNSHAN ZHONGCHEN SILICON CRYSTAL CO., LTD. (CN) | 2015-09-09 | — | — | CN | disclosed |
| CN-102790152-A | Epitaxial base material and manufacturing method thereof | KUNSHAN SINO SILICON TECHNOLOGY CO LTD | 2012-11-21 | — | — | CN | disclosed |
| US-8203136-B2 | Epitaxial substrate, semiconductor light-emitting device using such epitaxial substrate and fabrication thereof | SINO-AMERICAN SILICON PRODUCTS INC. (TW) | 2012-06-19 | — | — | US | disclosed |
| US-20120112158-A1 | EPITAXIAL SUBSTRATE, SEMICONDUCTOR LIGHT-EMITTING DEVICE USING SUCH EPITAXIAL SUBSTRATE AND FABRICATION THEREOF | SINO-AMERICAN SILICON PRODUCTS INC. (TW) | 2012-05-10 | — | — | US | disclosed |
| CN-101330117-B | Method for preparing illuminating device using zinc oxide | MINGQI ZHOU | 2012-04-18 | — | — | CN | disclosed |
| CN-1159251-A | Modified wurtzite structrue oxide compounds as substrates for III-V nitride compound semiconductor epitaxial thin film growth | UNIV OF CENTRAL FLORIDA (US) | 1997-09-10 | — | — | CN | disclosed |
| CN-1159251-A | Modified wurtzite structrue oxide compounds as substrates for III-V nitride compound semiconductor epitaxial thin film growth | UNIV OF CENTRAL FLORIDA (US) | 1997-09-10 | — | — | CN | disclosed |
| US-5625202-A | Modified wurtzite structure oxide compounds as substrates for III-V nitride compound semiconductor epitaxial thin film growth | UNIVERSITY OF CENTRAL FLORIDA (US) | 1997-04-29 | — | — | US | disclosed |
| US-5625202-A | Modified wurtzite structure oxide compounds as substrates for III-V nitride compound semiconductor epitaxial thin film growth | UNIVERSITY OF CENTRAL FLORIDA (US) | 1997-04-29 | — | — | US | disclosed |
| WO-1996042114-A1 | MODIFIED WURTZITE STRUCTURE OXIDE COMPOUNDS AS SUBSTRATES FOR III-V NITRIDE COMPOUND SEMICONDUCTOR EPITAXIAL THIN FILM GROWTH | UNIVERSITY OF CENTRAL FLORIDA (US) | 1996-12-27 | — | — | WO | disclosed |
| WO-1996042114-A1 | MODIFIED WURTZITE STRUCTURE OXIDE COMPOUNDS AS SUBSTRATES FOR III-V NITRIDE COMPOUND SEMICONDUCTOR EPITAXIAL THIN FILM GROWTH | UNIVERSITY OF CENTRAL FLORIDA (US) | 1996-12-27 | — | — | WO | disclosed |