Known targets — ChEMBL curated mechanism
The experimentally established mechanism targets of Lithium Ion. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Lithium Ion SCHEMBL1408594 | 0.87 | — | — | |
| SCHEMBL4649983 | 0.87 | — | — | |
| Lithium Ion SCHEMBL732940 | 0.87 | — | — | |
| Lithium Ion SCHEMBL918165 | 0.87 | — | — | |
| Lithium Ion SCHEMBL29566075 | 0.87 | — | — | |
| SCHEMBL7556943 | 0.87 | — | — | |
| Lithium Ion SCHEMBL18979668 | 0.75 | — | — | |
| Lithium Ion SCHEMBL1561454 | 0.75 | — | — | |
| Lithium Ion SCHEMBL15209471 | 0.75 | — | — | |
| Lithium Ion SCHEMBL31544685 | 0.75 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 37 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-102569025-B | Epitaxial substrate, semiconductor light emitting element using the same and manufacturing process | KUNSHAN SINO SILICON TECHNOLOGY CO LTD | 2014-12-24 | — | — | CN | claimed |
| CN-102569025-A | Epitaxial substrate, semiconductor light emitting element using the same and manufacturing process | KUNSHAN SINO SILICON TECHNOLOGY CO LTD | 2012-07-11 | — | — | CN | claimed |
| US-7863164-B2 | Method of growing GaN using CVD and HVPE | Natioal Sun Yat-Sen University (TW) | 2011-01-04 | — | — | US | claimed |
| US-20100248461-A1 | Method of growing GaN using CVD and HVPE | NATIONAL SUN YAT-SEN UNIVERSITY (TW) | 2010-09-30 | — | — | US | claimed |
| US-20080233415-A1 | Structure of LiAlO2 substrate having ZnO buffer layer | NATIONAL SUN YAT-SEN UNIVERSITY (TW) | 2008-09-25 | — | — | US | claimed |
| US-20080233671-A1 | Method of fabricating GaN LED | NATIONAL SUN YAT-SEN UNIVERSITY (TW) | 2008-09-25 | — | — | US | claimed |
| US-20080231172-A1 | Light emitting device using phosphor powder | NATIONAL SUN YAT-SEN UNIVERSITY (TW) | 2008-09-25 | — | — | US | claimed |
| CN-1105401-C | Modified wurtzite structrue oxide compounds as substrates for III-V nitride compound semiconductor epitaxial thin film growth | UNIV OF CENTRAL FLORIDA (US) | 2003-04-09 | — | — | CN | claimed |
| CN-1159251-A | Modified wurtzite structrue oxide compounds as substrates for III-V nitride compound semiconductor epitaxial thin film growth | UNIV OF CENTRAL FLORIDA (US) | 1997-09-10 | — | — | CN | claimed |
| US-5625202-A | Modified wurtzite structure oxide compounds as substrates for III-V nitride compound semiconductor epitaxial thin film growth | UNIVERSITY OF CENTRAL FLORIDA (US) | 1997-04-29 | — | — | US | claimed |
| WO-1996042114-A1 | MODIFIED WURTZITE STRUCTURE OXIDE COMPOUNDS AS SUBSTRATES FOR III-V NITRIDE COMPOUND SEMICONDUCTOR EPITAXIAL THIN FILM GROWTH | UNIVERSITY OF CENTRAL FLORIDA (US) | 1996-12-27 | — | — | WO | claimed |
| CN-102790152-B | Brilliant base material of heap of stone and manufacture method thereof | KUNSHAN ZHONGCHEN SILICON CRYSTAL CO., LTD. (CN) | 2015-09-09 | — | — | CN | disclosed |
| CN-102790152-A | Epitaxial base material and manufacturing method thereof | KUNSHAN SINO SILICON TECHNOLOGY CO LTD | 2012-11-21 | — | — | CN | disclosed |
| CN-101330117-B | Method for preparing illuminating device using zinc oxide | MINGQI ZHOU | 2012-04-18 | — | — | CN | disclosed |
| US-7868535-B2 | Light emitting device using phosphor powder | NATIONAL SUN YAT-SEN UNIVERSITY (TW) | 2011-01-11 | — | — | US | disclosed |
| CN-1159251-A | Modified wurtzite structrue oxide compounds as substrates for III-V nitride compound semiconductor epitaxial thin film growth | UNIV OF CENTRAL FLORIDA (US) | 1997-09-10 | — | — | CN | disclosed |
| US-5625202-A | Modified wurtzite structure oxide compounds as substrates for III-V nitride compound semiconductor epitaxial thin film growth | UNIVERSITY OF CENTRAL FLORIDA (US) | 1997-04-29 | — | — | US | disclosed |
| US-5625202-A | Modified wurtzite structure oxide compounds as substrates for III-V nitride compound semiconductor epitaxial thin film growth | UNIVERSITY OF CENTRAL FLORIDA (US) | 1997-04-29 | — | — | US | disclosed |
| WO-1996042114-A1 | MODIFIED WURTZITE STRUCTURE OXIDE COMPOUNDS AS SUBSTRATES FOR III-V NITRIDE COMPOUND SEMICONDUCTOR EPITAXIAL THIN FILM GROWTH | UNIVERSITY OF CENTRAL FLORIDA (US) | 1996-12-27 | — | — | WO | disclosed |
| WO-1996042114-A1 | MODIFIED WURTZITE STRUCTURE OXIDE COMPOUNDS AS SUBSTRATES FOR III-V NITRIDE COMPOUND SEMICONDUCTOR EPITAXIAL THIN FILM GROWTH | UNIVERSITY OF CENTRAL FLORIDA (US) | 1996-12-27 | — | — | WO | disclosed |