SCHEMBL920540

SCHEMBL920540

CC(C)(C)[Si](C)(C)C=C(O)O

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3787816 0.71 PTGS1 (0.31)
SCHEMBL29495779 0.68
SCHEMBL29051847 0.67
SCHEMBL15863919 0.65
SCHEMBL3884334 0.65 MGAM (0.31)
SCHEMBL2803568 0.62
SCHEMBL10532404 0.60
SCHEMBL1493141 0.60
SCHEMBL5005529 0.58
SCHEMBL20661189 0.56

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 35 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8481246-B2 Method of forming pattern KABUSHIKI KAISHA TOSHIBA (JP) 2013-07-09 US disclosed
US-20120244474-A1 METHOD OF FORMING PATTERN TOSHIBA MEMORY CORPORATION (JP) 2012-09-27 US disclosed
US-7871755-B2 Photosensitive composition KABUSHIKI KAISHA TOSHIBA (JP) 2011-01-18 US disclosed
US-20090081582-A1 irradiating a predetermined region of photosensitive layer, subjecting the photosensitive layer after baking to development treatment with an alkali aqueous solution to selectively remove the light-exposed part; has a photo-acid generator which generates an acid by the action of actinic radiation KABUSHIKI KAISHA TOSHIBA 2009-03-26 US disclosed
US-7163781-B2 Process for producing a semiconductor device KABUSHIKI KAISHA TOSHIBA (JP) 2007-01-16 US disclosed
US-7119156-B2 Resist resin KABUSHIKI KAISHA TOSHIBA (JP) 2006-10-10 US disclosed
US-7070905-B2 Pattern forming process KABUSHIKI KAISHA TOSHIBA (JP) 2006-07-04 US disclosed
US-7063932-B2 Resist resin KABUSHIKI KAISHA TOSHIBA (JP) 2006-06-20 US disclosed
US-7029823-B2 Resist composition KABUSHIKI KAISHA TOSHIBA (JP) 2006-04-18 US disclosed
US-6974658-B2 HIGH MOLECULAR COMPOUND, MONOMER COMPOUNDS AND PHOTOSENSITIVE COMPOSITION FOR PHOTORESIST, PATTERN FORMING METHOD UTILIZING PHOTOSENSITIVE COMPOSITION, AND METHOD OF MANUFACTURING ELECTRONIC COMPONENTS KABUSHIKI KAISHA TOSHIBA (JP) 2005-12-13 US disclosed
US-6291129-B1 LIGHT SENSITIVE ELEMENT WITH UNSATURATED POLYMERS KABUSHIKI KAISHA TOSHIBA (JP) 2001-09-18 US disclosed
US-6280897-B1 GENERATION OF ACID WITH ACTINIC RADIATION KABUSHIKI KAISHA TOSHIBA (JP) 2001-08-28 US disclosed
US-6071670-A PHOTORESIST RESIN COMPRISING PHOTOACID GENERATING COMPOUND AND AN ACID HYDROLYZABLE OLIGOMER HAVING ALICYCLIC OR POLYCONDENSED AROMATIC BACKBONE; ALKALI DEVELOPMENT WITH HIGH RESOLUTION, DRY ETCH RESISTANCE KABUSHIKI KAISHA TOSHIBA (JP) 2000-06-06 US disclosed
US-6060207-A LOW IN ABSORPTION OF A LIGHT SOURCE OF SHORT WAVELENGTH AND EXCELLENT IN DRY ETCH RESISTANCE; COMPRISES A COMPOUND HAVING A TERPENOID SKELETON KABUSHIKI KAISHA TOSHIBA (JP) 2000-05-09 US disclosed
US-6008213-A A INHIBITOR OF VITRONECTIN RECEPTOR AND FIBRINOGEN RECEPTOR; USEFUL FOR INHIBITING PLATELET AGGREGATION AND OSTEOPOROSIS SMITHKLINE BEECHAM CORPORATION (US) 1999-12-28 US disclosed
US-5932391-A CONTAINING AN ACYCLIC COMPOUND WHICH IS A VINYL POLYMERBEING LIGHT ABSORBENT KABUSHIKI KAISHA TOSHIBA (JP) 1999-08-03 US disclosed
EP-0910563-A1 INTEGRIN RECEPTOR ANTAGONISTS SMITHKLINE BEECHAM CORPORATION (US) 1999-04-28 EP disclosed
EP-0910563-A4 1999-04-28 EP disclosed
US-5863699-A FORMS A PATTERN THROUGH LIGHT-EXPOSURE WITH EITHER ARGON FLUORIDE OR FLUORINE EXCIMER LASERS, COMPRISES A COMPOUND HAVING EITHER AN ACID-DECOMPOSABLE OR ACID-CROSSLINKABLE GROUP KABUSHIKI KAISHA TOSHIBA (JP) 1999-01-26 US disclosed
WO-1997001540-A1 INTEGRIN RECEPTOR ANTAGONISTS SMITHKLINE BEECHAM CORPORATION (US) 1997-01-16 WO disclosed