SCHEMBL9245151

SCHEMBL9245151

[Mo].[TeH]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1116187 1.00
SCHEMBL11884320 0.82
SCHEMBL30052388 0.82
SCHEMBL31504611 0.82
SCHEMBL566501 0.82
SCHEMBL7081434 0.82
SCHEMBL34461903 0.82
SCHEMBL25396888 0.71
SCHEMBL8398525 0.71
SCHEMBL11142889 0.71

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 238 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2025083533-A1 SEMICONDUCTOR DEVICE 株式会社半導体エネルギー研究所 2025-04-24 WO claimed
CN-116219540-A Two-dimensional molybdenum-tellurium alloy and method for preparing two-dimensional molybdenum-tellurium alloy under ultrahigh vacuum 武汉大学 2023-06-06 CN claimed
CN-105140500-A Flexible film, preparation method thereof and lithium ion battery material using flexible film NAT CT NANOSCIENCE NCNST CHINA 2015-12-09 CN claimed
US-5024809-A Zircondium alloy tube having a sponge zircondium barrier layer in an elongated container with a central core filler with compounds of uranium, plutonium and thorium GENERAL ELECTRIC COMPANY (US) 1991-06-18 US claimed
JP-7289907-A None JP disclosed
WO-2026104963-A1 SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE 株式会社半導体エネルギー研究所 2026-05-21 WO disclosed
WO-2026099701-A1 SEMICONDUCTOR DEVICE 株式会社半導体エネルギー研究所 2026-05-15 WO disclosed
CN-116219540-B Two-dimensional molybdenum-tellurium alloy and method for preparing two-dimensional molybdenum-tellurium alloy under ultrahigh vacuum 武汉大学 2025-07-25 CN disclosed
CN-116219540-B Two-dimensional molybdenum-tellurium alloy and method for preparing two-dimensional molybdenum-tellurium alloy under ultrahigh vacuum 武汉大学 2025-07-25 CN disclosed
WO-2025109451-A1 SEMICONDUCTOR DEVICE AND STORAGE DEVICE 株式会社半導体エネルギー研究所 2025-05-30 WO disclosed
WO-2025094000-A1 SEMICONDUCTOR DEVICE 株式会社半導体エネルギー研究所 2025-05-08 WO disclosed
WO-2025088461-A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 株式会社半導体エネルギー研究所 2025-05-01 WO disclosed
CN-109607493-A Molybdenum telluric acid calcium compound and molybdenum telluric acid calcium non-linear optical crystal and its preparation method and application 中国科学院理化技术研究所 2019-04-12 CN disclosed
CN-105140500-B A kind of fexible film, its preparation method and use its lithium ion battery material 国家纳米科学中心 2017-10-20 CN disclosed
CN-105140500-A Flexible film, preparation method thereof and lithium ion battery material using flexible film NAT CT NANOSCIENCE NCNST CHINA 2015-12-09 CN disclosed
JP-H07289907-A PRODUCTION OF CATALYST FOR PRODUCING NITRILE MITSUBISHI CHEM CORP 1995-11-07 JP disclosed
US-5160721-A Catalyst regeneration with phosphorous and tellurium or their compounds NITTO CHEMICAL INDUSTRY CO., LTD. (JP) 1992-11-03 US disclosed
EP-0311334-B1 PROCESS FOR MAINTAINING HIGH LEVEL OF YIELD OF ACRYLONITRILE AND HYDROGEN CYANIDE IN AMMOXIDATION OF PROPYLENE NITTO CHEMICAL INDUSTRY CO., LTD. (JP) 1992-03-11 EP disclosed
EP-0311334-A1 Process for maintaining high level of yield of acrylonitrile and hydrogen cyanide in ammoxidation of propylene NITTO CHEMICAL INDUSTRY CO., LTD. (JP) 1989-04-12 EP disclosed
US-3989706-A CONTACTING A HYDROCARBON, AMMONIA AND OXYGEN WITH A SOLID ACID CATALYST TEIJIN LIMITED (JA) 1976-11-02 US disclosed