SCHEMBL9253549

SCHEMBL9253549

C=CC[Si]1(CC=C)CCC(C)(C)O[Si]1(C)C

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL28207709 0.81
SCHEMBL26108242 0.73
SCHEMBL132533 0.71
SCHEMBL6560369 0.71
SCHEMBL28012254 0.70
SCHEMBL5321397 0.67
SCHEMBL28259690 0.67
SCHEMBL13822459 0.67
SCHEMBL28307575 0.66
Lithium Ion SCHEMBL28603094 0.66

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 14 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-112625243-B Fluorine-containing modified polysiloxane, and preparation method and application thereof 山东东岳高分子材料有限公司 2022-09-02 CN claimed
CN-112552516-B Modified polysiloxane containing fluorine ring bodies, preparation method and application thereof 山东东岳高分子材料有限公司 2022-07-01 CN claimed
CN-112625243-A Fluorine-containing modified polysiloxane, preparation method and application thereof 山东东岳高分子材料有限公司 2021-04-09 CN claimed
CN-112552516-A Modified polysiloxane containing fluorine ring bodies, preparation method and application thereof 山东东岳高分子材料有限公司 2021-03-26 CN claimed
CN-105218827-B A kind of organic group modification super high molecular weight polysiloxanes and preparation method thereof 浙江佳华精化股份有限公司 2018-04-03 CN claimed
US-11848198-B2 Method for manufacturing semiconductor device having low-k carbon-containing dielectric layer TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2023-12-19 US disclosed
US-20230066228-A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE HAVING LOW-K CARBON-CONTAINING DIELECTRIC LAYER TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2023-03-02 US disclosed
CN-112625243-B Fluorine-containing modified polysiloxane, and preparation method and application thereof 山东东岳高分子材料有限公司 2022-09-02 CN disclosed
CN-112552516-B Modified polysiloxane containing fluorine ring bodies, preparation method and application thereof 山东东岳高分子材料有限公司 2022-07-01 CN disclosed
CN-112625243-A Fluorine-containing modified polysiloxane, preparation method and application thereof 山东东岳高分子材料有限公司 2021-04-09 CN disclosed
CN-112552516-A Modified polysiloxane containing fluorine ring bodies, preparation method and application thereof 山东东岳高分子材料有限公司 2021-03-26 CN disclosed
EP-0432761-B1 Method to reduce compression set in silanol-containing silicone elastomer bases DOW CORNING (US) 1995-05-17 EP disclosed
US-5081172-A Gaskets, seals DOW CORNING CORPORATION (US) 1992-01-14 US disclosed
EP-0432761-A2 Method to reduce compression set in silanol-containing silicone elastomer bases DOW CORNING CORPORATION (US) 1991-06-19 EP disclosed