SCHEMBL927650

SCHEMBL927650

[Cu].[TeH]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL29367432 1.00
SCHEMBL29393621 1.00
SCHEMBL31168111 1.00
SCHEMBL31634760 0.82
SCHEMBL10804627 0.82
SCHEMBL32679734 0.82
SCHEMBL30922199 0.82
SCHEMBL4102018 0.82
SCHEMBL31674372 0.82
Selenium SCHEMBL503514 0.82

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 377 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-116083749-B Tellurium copper alloy strip and preparation method thereof 宁波金田铜业(集团)股份有限公司 2025-06-03 CN claimed
CN-119592838-A Novel copper tellurium alloy for new energy field and low-cost preparation method thereof 中南大学 2025-03-11 CN claimed
US-11991937-B2 Semiconductor device and method for manufacturing the same TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (TW) 2024-05-21 US claimed
CN-117904473-A Preparation method of high-compactness low-oxygen low-inclusion copper-chromium alloy contact material 陕西斯瑞新材料股份有限公司 2024-04-19 CN claimed
CN-115821094-B Copper-based electrical contact material with high tellurium content and preparation method thereof 哈尔滨东大高新材料股份有限公司 2024-03-29 CN claimed
CN-116005020-B Preparation method of CuTe contact material for high-voltage direct-current contactor 陕西斯瑞新材料股份有限公司 2024-03-26 CN claimed
CN-114959278-B Method for efficiently separating and recovering copper and tellurium from copper-tellurium slag 金川集团股份有限公司 2024-02-20 CN claimed
CN-113697778-B Copper tellurium slag treatment method 金隆铜业有限公司 2023-12-26 CN claimed
CN-115747561-B Wear-resistant corrosion-resistant jewelry brass alloy and preparation method thereof 广州番禺职业技术学院 2023-12-12 CN claimed
CN-117070899-A Preparation method of high-density one-dimensional selenium-doped copper telluride chain 昆明理工大学 2023-11-17 CN claimed
CN-102219193-B Method for separating and recovering tellurium from copper-tellurium solution BEIJING GEN RES INST MINING 2013-07-31 CN claimed
CN-102994766-A Method for comprehensively recovering valuable metal from copper tellurium slag SIHUI CITY HONGMING PRECIOUS METALS CO LTD 2013-03-27 CN claimed
WO-2013006138-A1 ELECTRODE AND SYSTEM FOR INDUSTRIAL SCALE MEMBRANE BASED FREE-FLOW ISOELECTRIC FOCUSING JOYCE RIVER HI-TECH PTE LTD (SG) 2013-01-10 WO claimed
CN-102219193-A Method for separating and recovering tellurium from copper-tellurium solution BEIJING GEN RES INST MINING 2011-10-19 CN claimed
US-8022547-B2 Non-volatile memory cells including small volume electrical contact regions SEAGATE TECHNOLOGY LLC (US) 2011-09-20 US claimed
CN-102102157-A Multicomponent composite copper alloy electrical contact material WENWEI GU 2011-06-22 CN claimed
WO-2011044382-A1 POROUS SUBSTRATES FOR FABRICATION OF THIN FILM SOLAR CELLS REEL SOLAR INCORPORATED (US) 2011-04-14 WO claimed
CN-201584357-U Fusion welding resistant ceramic vacuum switch tube Jinzhou huaguang glass switch tube co ltd 2010-09-15 CN claimed
US-20100140578-A1 NON VOLATILE MEMORY CELLS INCLUDING A COMPOSITE SOLID ELECTROLYTE LAYER SEAGATE TECHNOLOGY LLC (US) 2010-06-10 US claimed
US-20100123117-A1 NON VOLATILE MEMORY CELLS INCLUDING A FILAMENT GROWTH LAYER AND METHODS OF FORMING THE SAME SEAGATE TECHNOLOGY LLC (US) 2010-05-20 US claimed