Known targets — ChEMBL curated mechanism
ACHECHRM1CHRM3CHRNA1CHRNB1CHRNDCHRNECHRNG
The experimentally established mechanism targets of Iodide. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Iodide SCHEMBL8604114 | 1.00 | — | — | |
| Iodide SCHEMBL119247 | 1.00 | — | — | |
| Iodide SCHEMBL11605203 | 0.82 | — | — | |
| Hydrochloric Acid SCHEMBL11544348 | 0.82 | — | — | |
| Hydrochloric Acid SCHEMBL7595526 | 0.82 | — | — | |
| Iodide SCHEMBL23858328 | 0.82 | — | — | |
| Fluoride SCHEMBL9494230 | 0.82 | — | — | |
| Iodide SCHEMBL2565477 | 0.82 | — | — | |
| Iodide SCHEMBL22092570 | 0.82 | — | — | |
| Iodide SCHEMBL5182386 | 0.82 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-118270832-A | Method for separating metal halide | 深圳华算科技有限公司 | 2024-07-02 | — | — | CN | disclosed |
| CN-118272921-A | Efficient synthesis, purification and encapsulation method for metal halide crystal | 深圳华算科技有限公司 | 2024-07-02 | — | — | CN | disclosed |
| US-5281274-A | Vapor deposition of silicon, germanium, tin, lead and diamond films, chemical reactors | THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE NAVY (US) | 1994-01-25 | — | — | US | disclosed |
| US-5225366-A | Modified atomic layer epitaxial growth technique | THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE NAVY (US) | 1993-07-06 | — | — | US | disclosed |