⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL21797153 | 0.82 | — | — | |
| SCHEMBL28328331 | 0.82 | — | — | |
| Hydrochloric Acid SCHEMBL28977934 | 0.82 | — | — | |
| SCHEMBL28151506 | 0.82 | — | — | |
| SCHEMBL23243662 | 0.71 | — | — | |
| SCHEMBL11114160 | 0.71 | — | — | |
| SCHEMBL31261762 | 0.71 | — | — | |
| SCHEMBL3273199 | 0.71 | — | — | |
| SCHEMBL19459 | 0.71 | — | — | |
| SCHEMBL15 | 0.71 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 123 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| WO-2023131491-A1 | COMPOSITE DIELECTRIC MATERIAL, CAPACITOR AND METHODS FOR PRODUCING SAID COMPOSITE DIELECTRIC MATERIAL AND SAID CAPACITOR | UNIVERSITY OF SOUTHERN DENMARK (DK) | 2023-07-13 | — | — | WO | claimed |
| CN-104752455-B | Nonvolatile semiconductor memory member | 爱思开海力士有限公司 | 2019-05-10 | — | — | CN | claimed |
| WO-2018231296-A1 | METHODS AND APPARATUS FOR THREE-DIMENSIONAL NONVOLATILE MEMORY | SANDISK TECHNOLOGIES LLC (US) | 2018-12-20 | — | — | WO | claimed |
| CN-105489754-A | Self-rectification memory unit structure of resistance random access memory | WINBOND ELECTRONICS CORP | 2016-04-13 | — | — | CN | claimed |
| CN-104779348-A | Semiconductor integrated circuit device having variable resistive layer and method of manufacturing the same | SK HYNIX INC | 2015-07-15 | — | — | CN | claimed |
| CN-104685626-A | Resistive memory devices | MICRON TECHNOLOGY INC | 2015-06-03 | — | — | CN | claimed |
| CN-102473454-B | PCMO non-volatile resistive memory with improved switching | SEAGATE TECHNOLOGY LLC | 2015-01-14 | — | — | CN | claimed |
| US-20140252296-A1 | RESISTIVE RANDOM-ACCESS MEMORY | NATIONAL TSING HUA UNIVERSITY (TW) | 2014-09-11 | — | — | US | claimed |
| CN-101354917-B | Non-volatile memory devices including stacked nand-type resistive memory cell strings and methods of fabricating the same | SAMSUNG ELECTRONICS CO LTD | 2014-05-07 | — | — | CN | claimed |
| CN-102473454-A | PCMO non-volatile resistive memory with improved switching | SEAGATE TECHNOLOGY LLC | 2012-05-23 | — | — | CN | claimed |
| WO-2011008651-A1 | PCMO NON-VOLATILE RESITIVE MEMORY WITH IMPROVED SWITCHING | SEAGATE TECHNOLOGY LLC (US) | 2011-01-20 | — | — | WO | claimed |
| CN-100552821-C | Non-volatile memory array and integrated circuit | IBM (US) | 2009-10-21 | — | — | CN | claimed |
| CN-101354917-A | Non-volatile memory devices including stacked nand-type resistive memory cell strings and methods of fabricating the same | SAMSUNG ELECTRONICS CO LTD (KR) | 2009-01-28 | — | — | CN | claimed |
| CN-101075480-A | Nonvolatile memory structure used dipole programmable resistance storing unit | IBM (US) | 2007-11-21 | — | — | CN | claimed |
| CN-1641879-A | Nonvolatile semiconductor memory device | SHARP KK (JP) | 2005-07-20 | — | — | CN | claimed |
| CN-119340509-B | All-solid-state hydride battery | 中国科学院大连化学物理研究所 | 2025-03-21 | — | — | CN | disclosed |
| CN-119340509-A | All-solid-state hydride battery | 中国科学院大连化学物理研究所 | 2025-01-21 | — | — | CN | disclosed |
| US-20060002174-A1 | Driving method of variable resistance element and memory device | SHARP KABUSHIKI KAISHA (JP) | 2006-01-05 | — | — | US | disclosed |
| EP-1612805-A1 | Writing method of variable resistance memory device | Sharp Kabushiki Kaisha (JP) | 2006-01-04 | — | — | EP | disclosed |
| CN-1641879-A | Nonvolatile semiconductor memory device | SHARP KK (JP) | 2005-07-20 | — | — | CN | disclosed |