⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL9721414 | 0.87 | — | — | |
| SCHEMBL6364324 | 0.87 | — | — | |
| SCHEMBL5998820 | 0.82 | — | — | |
| SCHEMBL29435147 | 0.82 | — | — | |
| SCHEMBL18204297 | 0.82 | — | — | |
| SCHEMBL3889721 | 0.82 | — | — | |
| SCHEMBL9690693 | 0.82 | — | — | |
| SCHEMBL82413 | 0.82 | — | — | |
| SCHEMBL9344406 | 0.78 | — | — | |
| SCHEMBL9344401 | 0.78 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 55 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8405173-B2 | Magnetic memory devices | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2013-03-26 | — | — | US | claimed |
| US-20250301917-A1 | MAGNETIC MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2025-09-25 | — | — | US | disclosed |
| US-12336437-B2 | Semiconductor devices and methods of fabricating the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2025-06-17 | — | — | US | disclosed |
| US-20250185519-A1 | MAGNETIC MEMORY DEVICE AND METHOD OF OPERATING THE SAME | SAMSUNG ELECTRONICS CO LTD (KR) | 2025-06-05 | — | — | US | disclosed |
| US-12290007-B2 | Magnetic memory device and method of operating the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2025-04-29 | — | — | US | disclosed |
| US-11906365-B2 | Long-wave infrared sensor and electronic device including the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2024-02-20 | — | — | US | disclosed |
| CN-112216789-B | Data storage device including first top electrode and second top electrode thereon | 三星电子株式会社 | 2024-01-02 | — | — | CN | disclosed |
| US-20230292630-A1 | MAGNETIC MEMORY DEVICE AND METHOD OF OPERATING THE SAME | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2023-09-14 | — | — | US | disclosed |
| CN-116744773-A | Magnetic memory device and method of operating the same | 三星电子株式会社 | 2023-09-12 | — | — | CN | disclosed |
| US-20230124189-A1 | LONG-WAVE INFRARED SENSOR AND ELECTRONIC DEVICE INCLUDING THE SAME | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2023-04-20 | — | — | US | disclosed |
| US-20170092849-A1 | MAGNETIC MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME | PARK SANG HWAN (KR) | 2017-03-30 | — | — | US | disclosed |
| US-20170040531-A1 | METHOD FOR FORMING A HARD MASK PATTERN AND METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE USING THE SAME | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2017-02-09 | — | — | US | disclosed |
| US-9543505-B2 | Magnetic memory device and method for manufacturing the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2017-01-10 | — | — | US | disclosed |
| US-20160365506-A1 | MAGNETIC MEMORY DEVICES | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2016-12-15 | — | — | US | disclosed |
| US-20160133831-A1 | METHOD OF FORMING METAL OXIDE LAYER AND MAGNETIC MEMORY DEVICE INCLUDING THE SAME | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2016-05-12 | — | — | US | disclosed |
| US-20160079520-A1 | MAGNETIC MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2016-03-17 | — | — | US | disclosed |
| US-20140339504-A1 | MAGNETIC MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2014-11-20 | — | — | US | disclosed |
| US-8405173-B2 | Magnetic memory devices | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2013-03-26 | — | — | US | disclosed |
| CN-102446451-A | Anti-counterfeiting component and anti-counterfeiting product | PRINTING SCIENCE & TECHNOLOGY INST THE PEOPLES BANK CHINA | 2012-05-09 | — | — | CN | disclosed |
| US-5187703-A | MAGNETO-OPTICAL MULTILAYER RECORDING DISK AND METHOD OF REPRODUCING THE SAME | SHARP KABUSHIKI KAISHA (JP) | 1993-02-16 | — | — | US | disclosed |