⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL8372093 | 0.78 | — | — | |
| SCHEMBL2329755 | 0.76 | — | — | |
| SCHEMBL451398 | 0.76 | — | — | |
| SCHEMBL8375403 | 0.73 | — | — | |
| SCHEMBL332433 | 0.71 | — | — | |
| SCHEMBL8372653 | 0.71 | — | — | |
| SCHEMBL8372181 | 0.71 | — | — | |
| SCHEMBL18263242 | 0.71 | — | — | |
| SCHEMBL8375373 | 0.71 | — | — | |
| SCHEMBL4395760 | 0.69 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 35 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8247617-B2 | Complexes for making atomic layer deposition strontium titanate or barium strontium titanate (BST) films without ligand contamination; Group 2A complexes of a beta-diketone and a tertiary amide e.g. Ba2(1,1,1,5,5,5-hexafluoro-2,4-pentanedione)4(N-methylpyrrolidinone)5; semiconductors; integrated circuits | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2012-08-21 | — | — | US | claimed |
| US-8030415-B2 | Process for crosslinking thermoplastic polymers with silanes employing peroxide blends, the resulting crosslinked thermoplastic polymer composition and articles made therefrom | MOMENTIVE PERFORMANCE MATERIALS, INC. (US) | 2011-10-04 | — | — | US | claimed |
| US-7892964-B2 | Strontium precursor beta -diketonate, beta -diketiminate, amidinate, cyclopentadienyl, diorganoamide, carboxylate and/or alkoxide; and titanium precursor compound are reacted in a plurality of cycles to form strontium titanate; low strontium carbonate content; atomic layer deposition; high dielectrics | MICRON TECHNOLOGY, INC. (US) | 2011-02-22 | — | — | US | claimed |
| US-7812078-B2 | Blend of an uncappped polycarbonate and an arylcarboxylate-endcapped homo-or copolycarbonate that is prepared by interfacial polymerization of diol, activated carbonyl compound and an arylcarbonyl halide; decreased discoloration after exposure to gamma radiation | SABIC INNOVATIVE PLASTICS IP B.V. (NL) | 2010-10-12 | — | — | US | claimed |
| US-20100204409-A1 | Process For Crosslinking Thermoplastic Polymers With Silanes Employing Peroxide Blends, The Resulting Crosslinked Thermoplastic Polymer Composition And Articles Made Therefrom | MOMENTIVE PERFORMANCE MATERIALS INC. (US) | 2010-08-12 | — | — | US | claimed |
| US-20090130338-A1 | Group 2 Metal Precursors for Depositing Multi-Component Metal Oxide Films | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2009-05-21 | — | — | US | claimed |
| US-20080286464-A1 | Complexes for making atomic layer deposition strontium titanate or barium strontium titanate (BST) films without ligand contamination; Group 2A complexes of a beta-diketone and a tertiary amide e.g. Ba2(1,1,1,5,5,5-hexafluoro-2,4-pentanedione)4(N-methylpyrrolidinone)5; semiconductors; integrated circuits | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2008-11-20 | — | — | US | claimed |
| WO-2008100691-A2 | VAPOR DEPOSITION METHODS FOR FORMING A METAL- CONTAINING LAYER ON A SUBSTRATE | MICRON TECHNOLOGY, INC. (US) | 2008-08-21 | — | — | WO | claimed |
| US-20080194088-A1 | Vapor deposition methods for forming a metal-containing layer on a substrate | MICRON TECHNOLOGY, INC. (US) | 2008-08-14 | — | — | US | claimed |
| US-20070100038-A1 | Ionizing radiation stable thermoplastic composition, method of making, and articles formed therefrom | SABIC GLOBAL TECHNOLOGIES IP B.V. (NL) | 2007-05-03 | — | — | US | claimed |
| EP-2084217-B1 | PROCESS FOR CROSSLINKING THERMOPLASTIC POLYMERS WITH SILANES EMPLOYING PEROXIDE BLENDS, THE RESULTING CROSSLINKED THERMOPLASTIC POLYMER COMPOSITION AND ARTICLES MADE THEREFROM | MOMENTIVE PERFORMANCE MAT INC (US) | 2020-07-22 | — | — | EP | disclosed |
| US-8557697-B2 | Vapor deposition methods for forming a metal-containing layer on a substrate | MICRON TECHNOLOGY, INC. (US) | 2013-10-15 | — | — | US | disclosed |
| EP-1951801-B1 | IONIZING RADIATION STABLE THERMOPLASTIC COMPOSITION, METHOD OF MAKING, AND ARTICLES FORMED THEREFROM | SABIC INNOVATIVE PLASTICS IP (NL) | 2013-01-02 | — | — | EP | disclosed |
| US-8247617-B2 | Complexes for making atomic layer deposition strontium titanate or barium strontium titanate (BST) films without ligand contamination; Group 2A complexes of a beta-diketone and a tertiary amide e.g. Ba2(1,1,1,5,5,5-hexafluoro-2,4-pentanedione)4(N-methylpyrrolidinone)5; semiconductors; integrated circuits | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2012-08-21 | — | — | US | disclosed |
| US-8030415-B2 | Process for crosslinking thermoplastic polymers with silanes employing peroxide blends, the resulting crosslinked thermoplastic polymer composition and articles made therefrom | MOMENTIVE PERFORMANCE MATERIALS, INC. (US) | 2011-10-04 | — | — | US | disclosed |
| EP-1845101-A1 | METHOD FOR PRODUCING ALKOXYTITANIUM COMPLEX | Sumitomo Chemical Company, Limited (JP) | 2007-10-17 | — | — | EP | disclosed |
| WO-2007053311-A2 | IONIZING RADIATION STABLE THERMOPLASTIC COMPOSITION, METHOD OF MAKING, AND ARTICLES FORMED THEREFROM | GENERAL ELECTRIC COMPANY (US) | 2007-05-10 | — | — | WO | disclosed |
| US-20070100038-A1 | Ionizing radiation stable thermoplastic composition, method of making, and articles formed therefrom | SABIC GLOBAL TECHNOLOGIES IP B.V. (NL) | 2007-05-03 | — | — | US | disclosed |
| US-7135207-B2 | Chemical vapor deposition method using alcohol for forming metal oxide thin film | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2006-11-14 | — | — | US | disclosed |
| US-20030185981-A1 | Chemical vapor deposition method using alcohol for forming metal oxide thin film | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2003-10-02 | — | — | US | disclosed |