SCHEMBL9608712

SCHEMBL9608712

CC1C2CC(C1C)C(C(F)(F)F)C2

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL20177954 0.93
SCHEMBL14593392 0.80
SCHEMBL14593338 0.80
SCHEMBL17409226 0.79
SCHEMBL2735062 0.79
SCHEMBL13127585 0.79
SCHEMBL13309983 0.76
SCHEMBL14356209 0.74
SCHEMBL14356215 0.73
SCHEMBL15268321 0.70

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 199 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20170351176-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, MASK BLANK INCLUDING ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2017-12-07 US disclosed
US-9816003-B2 Method of producing structure containing phase-separated structure TOKYO OHKA KOGYO CO., LTD. (JP) 2017-11-14 US disclosed
US-9760003-B2 Pattern forming method and actinic-ray- or radiation-sensitive resin composition FUJIFILM CORPORATION (JP) 2017-09-12 US disclosed
US-9709892-B2 Actinic-ray- or radiation-sensitive resin composition and method of forming pattern using the same FUJIFILM CORPORATION (JP) 2017-07-18 US disclosed
US-20170158905-A1 RESIN COMPOSITION FOR UNDERLAYER FILM FORMATION, LAYERED PRODUCT, METHOD FOR FORMING PATTERN, IMPRINT FORMING KIT, AND PROCESS FOR PRODUCING DEVICE FUJIFILM CORPORATION (JP) 2017-06-08 US disclosed
US-20170146908-A1 PATTERN FORMING METHOD AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE USING SAME FUJIFILM CORPORATION (JP) 2017-05-25 US disclosed
US-9644110-B2 Method of producing structure containing phase-separated structure and method of forming top coat film TOKYO OHKA KOGYO CO., LTD. (JP) 2017-05-09 US disclosed
US-20170115571-A1 PATTERN FORMING METHOD AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE USING SAME FUJIFILM CORPORATION (JP) 2017-04-27 US disclosed
US-9567477-B2 Undercoat agent and method of producing structure containing phase-separated structure TOKYO OHKA KOGYO CO., LTD. (JP) 2017-02-14 US disclosed
US-9568824-B2 Actinic-ray- or radiation-sensitive resin composition, resist film therefrom and method of forming pattern therewith FUJIFILM CORPORATION (JP) 2017-02-14 US disclosed
US-20080274421-A1 PHOTOSENSITIVE COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-11-06 US disclosed
US-7341817-B2 Photosensitive composition, compound for use in the photosensitive composition, and pattern forming method using the photosensitive composition FUJIFILM CORPORATION (JP) 2008-03-11 US disclosed
US-7335454-B2 Positive resist composition FUJIFILM CORPORATION (JP) 2008-02-26 US disclosed
US-7255971-B2 Positive resist composition FUJIFILM CORPORATION (JP) 2007-08-14 US disclosed
US-20070184384-A1 Novel sulfonium compound, photosensitive composition containing the compound and pattern-forming method using the photosensitive composition FUJIFILM CORPORATION (JP) 2007-08-09 US disclosed
US-20070141512-A1 Photosensitive composition, pattern-forming method using the photosensitve composition and compound in the photosensitive composition FUJIFILM CORPORATION (JP) 2007-06-21 US disclosed
US-20070134589-A1 Positive resist composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2007-06-14 US disclosed
EP-1795962-A2 Positive resist composition and pattern for forming method using the same Fujifilm Corporation (JP) 2007-06-13 EP disclosed
US-7195856-B2 Positive resist composition and pattern formation method using the same FUJIFILM CORPORATION (JP) 2007-03-27 US disclosed
US-7189492-B2 Photosensitive composition and pattern forming method using the same FUJI PHOTO FILM CO., LTD. (JP) 2007-03-13 US disclosed