⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL28742176 | 0.94 | — | — | |
| SCHEMBL28232222 | 0.94 | — | — | |
| Dimethylamine SCHEMBL15412965 | 0.85 | — | — | |
| Diethylamine SCHEMBL27852717 | 0.73 | TP53 (0.53) | — | |
| SCHEMBL13987105 | 0.71 | — | — | |
| SCHEMBL16284810 | 0.69 | — | — | |
| SCHEMBL15198818 | 0.67 | — | — | |
| SCHEMBL15844474 | 0.67 | — | — | |
| SCHEMBL28422816 | 0.64 | — | — | |
| SCHEMBL21461446 | 0.64 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 725 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-12518966-B2 | Selective plasma enhanced atomic layer deposition | VERSUM MATERIALS US, LLC (US) | 2026-01-06 | — | — | US | claimed |
| CN-111886676-B | Method for treating surface of wafer and composition therefor | 中央硝子株式会社 | 2024-09-27 | — | — | CN | claimed |
| CN-117779030-B | Silicon crystal tank liquid and environment-friendly metal surface treatment process | 开平和盟环保科技有限公司 | 2024-05-17 | — | — | CN | claimed |
| US-20240047196-A1 | SELECTIVE THERMAL ATOMIC LAYER DEPOSITION | VERSUM MAT US LLC (US) | 2024-02-08 | — | — | US | claimed |
| US-20240014036-A1 | SELECTIVE PLASMA ENHANCED ATOMIC LAYER DEPOSITION | VERSUM MATERIALS US, LLC | 2024-01-11 | — | — | US | claimed |
| CN-116918029-A | selective thermal atomic layer deposition | 弗萨姆材料美国有限责任公司 | 2023-10-20 | — | — | CN | claimed |
| CN-116761906-A | Selective plasma enhanced atomic layer deposition | 弗萨姆材料美国有限责任公司 | 2023-09-15 | — | — | CN | claimed |
| EP-4240886-A1 | SELECTIVE PLASMA ENHANCED ATOMIC LAYER DEPOSITION | Versum Materials US, LLC (US) | 2023-09-13 | — | — | EP | claimed |
| EP-4241299-A1 | SELECTIVE THERMAL ATOMIC LAYER DEPOSITION | Versum Materials US, LLC (US) | 2023-09-13 | — | — | EP | claimed |
| WO-2022119860-A9 | SELECTIVE THERMAL ATOMIC LAYER DEPOSITION | VERSUM MATERIAL US, LLC (US) | 2023-08-24 | — | — | WO | claimed |
| CN-101010289-A | Method for preparing 4, 5-diamino shikimic acid | HOFFMANN LA ROCHE (CH) | 2007-08-01 | — | — | CN | claimed |
| US-7179758-B2 | Recovery of hydrophobicity of low-k and ultra low-k organosilicate films used as inter metal dielectrics | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2007-02-20 | — | — | US | claimed |
| CN-1839468-A | Repairing damage to low-K dielectric materials using silylating agents | HONEYWELL INT INC (US) | 2006-09-27 | — | — | CN | claimed |
| CN-1236480-C | Application of multifunctional silicon-based oligomer/polymer nano-pore silica film in surface modification | ALLIED SIGNAL INC (US) | 2006-01-11 | — | — | CN | claimed |
| US-6316162-B1 | PHOTORESISTS PATTERNS AND MALEIC ANHYDRIDE-NORBORNENE ESTER COPOLYMERS AND PHOTOACID GENERATORS, COATINGS AND EXPOSURE, SPRAYING SILYLATION AND DRY ETCHING | HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. (KR) | 2001-11-13 | — | — | US | claimed |
| US-6225020-B1 | SUCH AS USED IN 4 G OR 16 G DRAM SEMICONDUCTOR DEVICES USING A LIGHT SOURCE SUCH AS ARF, AN E-BEAM, EUV, OR AN ION BEAM, PHOTORESIST FOR THE TOP SURFACE IMAGE (TSI) PROCESS USING SILYLATION, MALEIMIDE ANDNORBONENE CARBOXYLATE COMONOMERS, | HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. (KR) | 2001-05-01 | — | — | US | claimed |
| CN-1277957-A | Method for preparing neuraminidase inhibitor RO-64-0796 | HOFFMANN LA ROCHE (CH) | 2000-12-27 | — | — | CN | claimed |
| CN-1092554-A | Form the method for Micropicture | SAMSUNG ELECTRONICS CO LTD (KR) | 1994-09-21 | — | — | CN | claimed |
| CN-1083938-A | Photoresist composition and application said composition produce the method for figure | SAMSUNG ELECTRONICS CO LTD (KR) | 1994-03-16 | — | — | CN | claimed |
| EP-0184567-B1 | PROCESS FOR THE FORMATION OF NEGATIVE PATTERNS IN A PHOTORESIST LAYER | UCB Electronics, S.A. (BE) | 1989-12-13 | — | — | EP | claimed |