Known targets — ChEMBL curated mechanism
The experimentally established mechanism targets of None. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL29499511 | 0.87 | — | — | |
| SCHEMBL5615326 | 0.87 | — | — | |
| SCHEMBL18815475 | 0.87 | — | — | |
| SCHEMBL1281482 | 0.87 | — | — | |
| SCHEMBL17002618 | 0.87 | — | — | |
| SCHEMBL10384897 | 0.82 | — | — | |
| SCHEMBL10383898 | 0.82 | — | — | |
| SCHEMBL14119245 | 0.82 | — | — | |
| SCHEMBL15398 | 0.82 | — | — | |
| SCHEMBL608186 | 0.82 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 246 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-12063793-B2 | Chalcogen compound and semiconductor device including the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2024-08-13 | — | — | US | claimed |
| EP-3996159-B1 | CHALCOGEN COMPOUND AND SEMICONDUCTOR DEVICE INCLUDING THE SAME | SAMSUNG ELECTRONICS CO LTD (KR) | 2023-11-15 | — | — | EP | claimed |
| CN-113307639-B | Strontium-zirconium oxide complex phase refractory material and preparation method thereof | 上海大学 | 2023-03-17 | — | — | CN | claimed |
| US-20220149114-A1 | CHALCOGEN COMPOUND AND SEMICONDUCTOR DEVICE INCLUDING THE SAME | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2022-05-12 | — | — | US | claimed |
| EP-3996159-A1 | CHALCOGEN COMPOUND AND SEMICONDUCTOR DEVICE INCLUDING THE SAME | Samsung Electronics Co., Ltd. (KR) | 2022-05-11 | — | — | EP | claimed |
| CN-114464731-A | Chalcogen compound, semiconductor device, and semiconductor device | 三星电子株式会社 | 2022-05-10 | — | — | CN | claimed |
| CN-114447220-A | Semiconductor device including chalcogen compound and semiconductor apparatus including the same | 三星电子株式会社 | 2022-05-06 | — | — | CN | claimed |
| US-20220140003-A1 | SEMICONDUCTOR DEVICE INCLUDING CHALCOGEN COMPOUND AND SEMICONDUCTOR APPARATUS INCLUDING THE SAME | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2022-05-05 | — | — | US | claimed |
| CN-113307639-A | Strontium-zirconium oxide complex phase refractory material and preparation method thereof | 上海大学 | 2021-08-27 | — | — | CN | claimed |
| US-9601145-B1 | Heat-assisted magnetic recording (HAMR) disk with multiple continuous magnetic recording layers | HGST Netherlands B.V. (NL) | 2017-03-21 | — | — | US | claimed |
| US-20080048292-A1 | ELECTRONIC DEVICE AND MANUFACTURING METHOD THEREOF | FUJITSU LIMITED (JP) | 2008-02-28 | — | — | US | claimed |
| US-7324366-B2 | Non-volatile memory architecture employing bipolar programmable resistance storage elements | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2008-01-29 | — | — | US | claimed |
| US-20080011996-A1 | MULTI-LAYER DEVICE WITH SWITCHABLE RESISTANCE | INTERNATIONAL BUSINESS MACHINES CORPORATION | 2008-01-17 | — | — | US | claimed |
| US-20070247893-A1 | Non-volatile memory architecture employing bipolar programmable resistance storage elements | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2007-10-25 | — | — | US | claimed |
| US-7217643-B2 | Semiconductor structures and methods for fabricating semiconductor structures comprising high dielectric constant stacked structures | FREESCALE SEMICONDUCTORS, INC. (US) | 2007-05-15 | — | — | US | claimed |
| US-20070018219-A1 | Unit cell structure, method of manufacturing the same, non-volatile semiconductor device having the unit cell structure and method of manufacturing the non-volatile semiconductor device | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2007-01-25 | — | — | US | claimed |
| US-20060197227-A1 | Semiconductor structures and methods for fabricating semiconductor structures comprising high dielectric constant stacked structures | NXP, B.V. F/K/A FREESCALE SEMICONDUCTOR, INC. (NL) | 2006-09-07 | — | — | US | claimed |
| WO-1997031878-A1 | CERAMIC MEMBER, METHOD FOR PRODUCING SUCH A MEMBER AND USE OF SUCH A MEMBER | UNIVERSITE DE GENEVE (CH) | 1997-09-04 | — | — | WO | claimed |
| EP-0566071-B1 | Method for reducing nitrogen oxides | TOYODA CHUO KENKYUSHO KK (JP) | 1997-07-02 | — | — | EP | claimed |
| US-5352337-A | Efficient catalytic reduction in oxidizing atmosphere using hydrogen from electrolysis of water vapor as reducing agent, for exhaust systems of internal combustion engines | KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO (JP) | 1994-10-04 | — | — | US | claimed |