⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL29377737 | 0.71 | — | — | |
| Ammonia Solution, Strong SCHEMBL27759854 | 0.71 | — | — | |
| SCHEMBL29388660 | 0.71 | — | — | |
| SCHEMBL28363565 | 0.71 | — | — | |
| SCHEMBL5967825 | 0.50 | — | — | |
| SCHEMBL139031 | 0.50 | — | — | |
| SCHEMBL9229774 | 0.50 | — | — | |
| SCHEMBL10802613 | 0.50 | — | — | |
| SCHEMBL417939 | 0.50 | — | — | |
| Lithium Ion SCHEMBL2020200 | 0.50 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-122061256-A | Low-defect indium arsenide monocrystal and preparation process thereof | 青岛浩瀚全材半导体有限公司 | 2026-05-19 | — | — | CN | disclosed |
| US-5037770-A | Process for the production of a field effect transistor using a lanthanum arsenide contact layer | FRAUNHOFER-GESELLSCHAFT ZUR FORDERUNG DER ANGEWANDTEN FORSCHUNG E.V. (DE) | 1991-08-06 | — | — | US | disclosed |
| US-4882206-A | Chemical vapor deposition of group IIIB metals | GEORGIA TECH RESEARCH CORPORATION (US) | 1989-11-21 | — | — | US | disclosed |
| EP-0025668-B1 | PROCESS FOR PURIFYING GROUP III ELEMENTS AND EPITAXIAL GROWTH OF SEMICONDUCTOR COMPOUNDS | THE POST OFFICE (GB) | 1983-11-02 | — | — | EP | disclosed |
| US-4339302-A | PURIFYING GROUP 3A ELEMENT MIXED WITH GROUP 6A ELEMENT | THE POST OFFICE (GB) | 1982-07-13 | — | — | US | disclosed |
| EP-0025668-A1 | Process for purifying group III elements and epitaxial growth of semiconductor compounds | THE POST OFFICE (GB) | 1981-03-25 | — | — | EP | disclosed |