⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL6114 | 0.97 | — | — | |
| SCHEMBL4858248 | 0.93 | — | — | |
| SCHEMBL8573707 | 0.93 | — | — | |
| SCHEMBL9396203 | 0.93 | — | — | |
| SCHEMBL2355348 | 0.93 | — | — | |
| SCHEMBL8387892 | 0.93 | — | — | |
| SCHEMBL1506860 | 0.93 | — | — | |
| Hydrochloric Acid SCHEMBL2210811 | 0.93 | — | — | |
| SCHEMBL10670323 | 0.93 | — | — | |
| SCHEMBL3343234 | 0.93 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 22 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9595393-B2 | Dielectric-thin-film forming composition, method of forming dielectric thin film, and dielectric thin film formed by the method | MITSUBISHI MATERIALS CORPORATION (JP) | 2017-03-14 | — | — | US | claimed |
| CN-103177797-B | The composition for forming dielectric film, the dielectric film for forming the method for dielectric film and being formed by methods described | 三菱综合材料株式会社 | 2017-10-10 | — | — | CN | disclosed |
| EP-2431986-B1 | Dielectric-thin-film forming composition, method of forming dielectric thin film, and dielectric thin film formed by the method | MITSUBISHI MATERIALS CORP (JP) | 2017-06-21 | — | — | EP | disclosed |
| US-9595393-B2 | Dielectric-thin-film forming composition, method of forming dielectric thin film, and dielectric thin film formed by the method | MITSUBISHI MATERIALS CORPORATION (JP) | 2017-03-14 | — | — | US | disclosed |
| EP-2474505-B1 | PROCESS OF FORMING DIELECTRIC THIN FILM AND THIN FILM CAPACITOR HAVING SAID DIELECTRIC THIN FILM | MITSUBISHI MATERIALS CORP (JP) | 2016-07-27 | — | — | EP | disclosed |
| US-9018118-B2 | Dielectric thin film-forming composition, method of forming dielectric thin film and dielectric thin film formed by the method | MITSUBISHI MATERIALS CORPORATION (JP) | 2015-04-28 | — | — | US | disclosed |
| EP-2608219-B1 | Dielectric thin film-forming composition, method of forming dielectric thin film and dielectric thin film formed by the method | MITSUBISHI MATERIALS CORP (JP) | 2015-03-04 | — | — | EP | disclosed |
| US-8891227-B2 | Process of forming dielectric thin film and thin film capacitor having said dielectric thin film | MITSUBISHI MATERIALS CORPORATION (JP) | 2014-11-18 | — | — | US | disclosed |
| CN-103964838-A | Dielectric thin film-forming composition and method of forming dielectric thin film | MITSUBISHI MATERIALS CORP | 2014-08-06 | — | — | CN | disclosed |
| US-20140212576-A1 | DIELECTRIC THIN FILM-FORMING COMPOSITION AND METHOD OF FORMING DIELECTRIC THIN FILM USING THE SAME | MITSUBISHI MATERIALS CORPORATION (JP) | 2014-07-31 | — | — | US | disclosed |
| EP-2608219-A1 | Dielectric thin film-forming composition, method of forming dielectric thin film and dielectric thin film formed by the method | Mitsubishi Materials Corporation (JP) | 2013-06-26 | — | — | EP | disclosed |
| US-20130155571-A1 | DIELECTRIC THIN FILM-FORMING COMPOSITION, METHOD OF FORMING DIELECTRIC THIN FILM AND DIELECTRIC THIN FILM FORMED BY THE METHOD | STMicroelectronics(Tours) SAS (FR) | 2013-06-20 | — | — | US | disclosed |
| US-20120224297-A1 | PROCESS OF FORMING DIELECTRIC THIN FILM AND THIN FILM CAPACITOR HAVING SAID DIELECTRIC THIN FILM | MITSUBISHI MATERIALS CORPORATION (JP) | 2012-09-06 | — | — | US | disclosed |
| EP-2474505-A1 | METHOD FOR FORMING DIELECTRIC THIN FILM, AND THIN FILM CAPACITOR COMPRISING THE DIELECTRIC THIN FILM | Mitsubishi Materials Corporation (JP) | 2012-07-11 | — | — | EP | disclosed |
| CN-102436866-A | Dielectric film-forming composition, method for forming dielectric film and dielectric film formed by the method | MITSUBISHI MATERIALS CORP | 2012-05-02 | — | — | CN | disclosed |
| EP-2431986-A1 | Dielectric-thin-film forming composition, method of forming dielectric thin film, and dielectric thin film formed by the method | Mitsubishi Materials Corporation (JP) | 2012-03-21 | — | — | EP | disclosed |
| US-20120055372-A1 | DIELECTRIC-THIN-FILM FORMING COMPOSITION, METHOD OF FORMING DIELECTRIC THIN FILM, AND DIELECTRIC THIN FILM FORMED BY THE METHOD | MITSUBISHI MATERIALS CORPORATION (JP) | 2012-03-08 | — | — | US | disclosed |
| EP-2426684-A1 | Dielectric-thin-film forming composition, method of forming dielectric thin film, and dielectric thin film formed by the method | MITSUBISHI MATERIALS CORPORATION (JP) | 2012-03-07 | — | — | EP | disclosed |
| US-5807495-A | Bi-based dielectric thin films, and compositions and method for forming them | MITSUBISHI MATERIALS CORPORATION (JP) | 1998-09-15 | — | — | US | disclosed |
| US-5645634-A | Composition and method for forming Ba1-X Srx Tiy O3 thin films | MITSUBISHI MATERIALS CORPORATION (JP) | 1997-07-08 | — | — | US | disclosed |