SCHEMBL981314

SCHEMBL981314

C=C1C(=O)OC1C

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL12135627 0.83
SCHEMBL3850944 0.79 KAT2A (0.32)
SCHEMBL3859890 0.79 KAT2A (0.32)
SCHEMBL2377727 0.72
SCHEMBL19213921 0.72
SCHEMBL18597779 0.70
SCHEMBL15871607 0.69 CA1 (0.30)
SCHEMBL9971730 0.69 CA1 (0.30)
SCHEMBL4382760 0.69 CA1 (0.30)
SCHEMBL10069773 0.66

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 33 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20190125826-A1 METHODS AND PHARMACEUTICAL COMPOSITION FOR THE TREATMENT OF INFLAMMATORY SKIN DISEASES ASSOCIATED WITH DESMOGLEIN-1 DEFICIENCY INSERM INSTITUT NAT DE LA SANTE ET DE LA MEDICALE (FR) 2019-05-02 US disclosed
US-20170313669-A1 LACTONE COMPOUNDS AND METHODS OF MAKING AND USING SAME THE SCRIPPS RESEARCH INSTITUTE 2017-11-02 US disclosed
US-8062830-B2 Chemically amplified positive resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-11-22 US disclosed
US-8062829-B2 Chemically amplified resist composition and chemically amplified resist composition for immersion lithography SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-11-22 US disclosed
US-8062829-B2 Chemically amplified resist composition and chemically amplified resist composition for immersion lithography SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-11-22 US disclosed
US-8062830-B2 Chemically amplified positive resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-11-22 US disclosed
US-8057983-B2 liquid immersion lithography, solves problem of defect caused by residual fluid droplets on the resist film; blend of resin containing no fluorine and acid labile group, and an acrylic fluoro-copolymer with units of a fluoromonomer and units of acid labile, lactone, or hydroxy-functional group SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-11-15 US disclosed
US-8057983-B2 liquid immersion lithography, solves problem of defect caused by residual fluid droplets on the resist film; blend of resin containing no fluorine and acid labile group, and an acrylic fluoro-copolymer with units of a fluoromonomer and units of acid labile, lactone, or hydroxy-functional group SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-11-15 US disclosed
US-8048612-B2 Polymer and chemically amplified resist composition comprising the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-11-01 US disclosed
US-8048612-B2 Polymer and chemically amplified resist composition comprising the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-11-01 US disclosed
US-20090264565-A1 POLYMER AND CHEMICALLY AMPLIFIED RESIST COMPOSITION COMPRISING THE SAME SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2009-10-22 US disclosed
US-20090220890-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND CHEMICALLY AMPLIFIED RESIST COMPOSITION FOR IMMERSION LITHOGRAPHY SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2009-09-03 US disclosed
US-20090220890-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND CHEMICALLY AMPLIFIED RESIST COMPOSITION FOR IMMERSION LITHOGRAPHY SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2009-09-03 US disclosed
US-20080311478-A1 Lithium Secondary Battery MITSUBISHI CHEMICAL CORPORATION (JP) 2008-12-18 US disclosed
CN-101203982-A Lithium secondary battery MITSUBISHI CHEM CORP (JP) 2008-06-18 CN disclosed
EP-1892789-A1 LITHIUM SECONDARY BATTERY Mitsubishi Chemical Corporation (JP) 2008-02-27 EP disclosed
US-20070218401-A1 liquid immersion lithography, solves problem of defect caused by residual fluid droplets on the resist film; blend of resin containing no fluorine and acid labile group, and an acrylic fluoro-copolymer with units of a fluoromonomer and units of acid labile, lactone, or hydroxy-functional group SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2007-09-20 US disclosed
US-20070218401-A1 liquid immersion lithography, solves problem of defect caused by residual fluid droplets on the resist film; blend of resin containing no fluorine and acid labile group, and an acrylic fluoro-copolymer with units of a fluoromonomer and units of acid labile, lactone, or hydroxy-functional group SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2007-09-20 US disclosed
US-6677419-B1 REACTING STOICHIOMETRIC EXCESS OF UNSATURATED ALICYCLIC MONOMER WITH ANOTHER UNSATURATED MONOMER, HAVING LESS THAN TWO ELECTRON-WITHDRAWING GROUPS APPENDED TO UNSATURATION, IN PRESENCE OF FREE RADICAL INITIATOR INTERNATIONAL BUSINESS MACHINES CORPORATION 2004-01-13 US disclosed
US-5523319-A OXIDATION RESISTANCE; PRESERVATIVE LORE L (FR) 1996-06-04 US disclosed