⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL988457 | 0.89 | — | — | |
| SCHEMBL972425 | 0.89 | — | — | |
| SCHEMBL20335309 | 0.80 | — | — | |
| SCHEMBL472219 | 0.80 | — | — | |
| SCHEMBL11323442 | 0.78 | — | — | |
| SCHEMBL15399 | 0.78 | — | — | |
| SCHEMBL27548494 | 0.78 | — | — | |
| SCHEMBL2286219 | 0.78 | — | — | |
| SCHEMBL25282004 | 0.67 | — | — | |
| SCHEMBL16617245 | 0.67 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 307 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-12063793-B2 | Chalcogen compound and semiconductor device including the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2024-08-13 | — | — | US | claimed |
| EP-3996159-B1 | CHALCOGEN COMPOUND AND SEMICONDUCTOR DEVICE INCLUDING THE SAME | SAMSUNG ELECTRONICS CO LTD (KR) | 2023-11-15 | — | — | EP | claimed |
| US-20220149114-A1 | CHALCOGEN COMPOUND AND SEMICONDUCTOR DEVICE INCLUDING THE SAME | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2022-05-12 | — | — | US | claimed |
| EP-3996159-A1 | CHALCOGEN COMPOUND AND SEMICONDUCTOR DEVICE INCLUDING THE SAME | Samsung Electronics Co., Ltd. (KR) | 2022-05-11 | — | — | EP | claimed |
| CN-114464731-A | Chalcogen compound, semiconductor device, and semiconductor device | 三星电子株式会社 | 2022-05-10 | — | — | CN | claimed |
| CN-114447220-A | Semiconductor device including chalcogen compound and semiconductor apparatus including the same | 三星电子株式会社 | 2022-05-06 | — | — | CN | claimed |
| US-20220140003-A1 | SEMICONDUCTOR DEVICE INCLUDING CHALCOGEN COMPOUND AND SEMICONDUCTOR APPARATUS INCLUDING THE SAME | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2022-05-05 | — | — | US | claimed |
| US-20070018219-A1 | Unit cell structure, method of manufacturing the same, non-volatile semiconductor device having the unit cell structure and method of manufacturing the non-volatile semiconductor device | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2007-01-25 | — | — | US | claimed |
| US-12543512-B2 | Semiconductor device and semiconductor apparatus including the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2026-02-03 | — | — | US | disclosed |
| US-12446233-B2 | Variable resistance memory device | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2025-10-14 | — | — | US | disclosed |
| CN-110867463-B | Variable resistance memory device | 三星电子株式会社 | 2025-03-25 | — | — | CN | disclosed |
| CN-111415956-B | Variable resistance memory device and method of manufacturing the same | 三星电子株式会社 | 2025-01-10 | — | — | CN | disclosed |
| US-20240414926-A1 | SEMICONDUCTOR DEVICE INCLUDING CHALCOGEN COMPOUND AND SEMICONDUCTOR APPARATUS INCLUDING THE SAME | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2024-12-12 | — | — | US | disclosed |
| US-12101942-B2 | Semiconductor device including chalcogen compound and semiconductor apparatus including the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2024-09-24 | — | — | US | disclosed |
| CN-102157527-A | Semiconductor memory devices | SAMSUNG ELECTRONICS CO LTD | 2011-08-17 | — | — | CN | disclosed |
| US-20110156119-A1 | SEMICONDUCTOR MEMORY DEVICES AND METHODS OF FORMING THE SAME | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2011-06-30 | — | — | US | disclosed |
| US-20110017971-A1 | INTEGRATED CIRCUIT DEVICES INCLUDING LOW-RESISTIVITY CONDUCTIVE PATTERNS IN RECESSED REGIONS | SAMSUNG ELECTRONICS CO., LTD. | 2011-01-27 | — | — | US | disclosed |
| US-20100240189-A1 | Methods of Fabricating Semiconductor Devices | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2010-09-23 | — | — | US | disclosed |
| US-20090275169-A1 | SEMICONDUCTOR DEVICES AND METHODS OF FORMING THE SAME | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2009-11-05 | — | — | US | disclosed |
| US-20070018219-A1 | Unit cell structure, method of manufacturing the same, non-volatile semiconductor device having the unit cell structure and method of manufacturing the non-volatile semiconductor device | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2007-01-25 | — | — | US | disclosed |