Zinc Ion

Zinc Ion

SCHEMBL987249

[Be+2].[Mg+2].[O-2].[O-2].[O-2].[Zn+2]

nearest known ligand 0.00

Full drug profile on Sugi Atlas →

Known targets — ChEMBL curated mechanism

ATP4AATP4BGABBR1GABBR2HMGCR

The experimentally established mechanism targets of Zinc Ion. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Zinc Ion SCHEMBL4530821 0.89
SCHEMBL11793486 0.87
Zinc Ion SCHEMBL985217 0.87
Zinc Ion SCHEMBL269237 0.87
Zinc Ion SCHEMBL29556868 0.87
Zinc Ion SCHEMBL1953224 0.87
Zinc Ion SCHEMBL23069448 0.75
Zinc Ion SCHEMBL3399166 0.75
Zinc Ion SCHEMBL16053788 0.75
Zinc Ion SCHEMBL296861 0.75

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 34 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2442373-B1 LIGHT-EMITTING DEVICES SNU R&DB FOUNDATION (KR) 2019-04-03 EP claimed
EP-2247528-B1 NANODEVICE, TRANSISTOR COMPRISING THE NANODEVICE, METHOD FOR MANUFACTURING THE NANODEVICE, AND METHOD FOR MANUFACTURING THE TRANSISTOR LG DISPLAY CO LTD (KR) 2016-05-11 EP claimed
US-8357922-B2 Nanodevice, transistor comprising the nanodevice, method for manufacturing the nanodevice, and method for manufacturing the transistor LG DISPLAY CO., LTD. (KR) 2013-01-22 US claimed
US-8003192-B2 Nanodevice comprising a nanorod and method for manufacturing the same LG DISPLAY CO., LTD. (KR) 2011-08-23 US claimed
US-20110017973-A1 Nanodevice, Transistor Comprising the Nanodevice, Method for Manufacturing the Nanodevice, and Method for Manufacturing the Transistor POSTECH ACADEMY-INDUSTRY FOUNDATION (KR) 2011-01-27 US claimed
EP-2247528-A1 NANODEVICE, TRANSISTOR COMPRISING THE NANODEVICE, METHOD FOR MANUFACTURING THE NANODEVICE, AND METHOD FOR MANUFACTURING THE TRANSISTOR Postech Academy-Industry Foundation (KR) 2010-11-10 EP claimed
WO-2009099259-A1 NANODEVICE, TRANSISTOR COMPRISING THE NANODEVICE, METHOD FOR MANUFACTURING THE NANODEVICE, AND METHOD FOR MANUFACTURING THE TRANSISTOR POSTECH ACADEMY-INDUSTRY FOUNDATION (KR) 2009-08-13 WO claimed
US-20090068411-A1 Nanodevice Comprising a Nanorod and Method for Manufacturing the Same POSTECH ACADEMY-INDUSTRY FOUNDATION (KR) 2009-03-12 US claimed
EP-4490335-B1 IMPROVED PRODUCTION OF AN ENERGY-REFLECTING COMPOSITE MICHIELS GROUP (BE) 2026-05-06 EP disclosed
US-20250187974-A1 IMPROVED PRODUCTION OF AN ENERGY-REFLECTING COMPOSITE MICHIELS GROUP (BE) 2025-06-12 US disclosed
EP-4490335-A1 IMPROVED PRODUCTION OF AN ENERGY-REFLECTING COMPOSITE MICHIELS GROUP (BE) 2025-01-15 EP disclosed
EP-4489560-A1 IMPROVED CONTROL OF RADIATION IN AGRICULTURE MICHIELS GROUP (BE) 2025-01-15 EP disclosed
WO-2023170214-A1 IMPROVED PRODUCTION OF AN ENERGY-REFLECTING COMPOSITE MICHIELS GROUP (BE) 2023-09-14 WO disclosed
WO-2023170215-A1 IMPROVED CONTROL OF RADIATION IN AGRICULTURE MICHIELS GROUP (BE) 2023-09-14 WO disclosed
US-8003192-B2 Nanodevice comprising a nanorod and method for manufacturing the same LG DISPLAY CO., LTD. (KR) 2011-08-23 US disclosed
US-20110017973-A1 Nanodevice, Transistor Comprising the Nanodevice, Method for Manufacturing the Nanodevice, and Method for Manufacturing the Transistor POSTECH ACADEMY-INDUSTRY FOUNDATION (KR) 2011-01-27 US disclosed
EP-2247528-A1 NANODEVICE, TRANSISTOR COMPRISING THE NANODEVICE, METHOD FOR MANUFACTURING THE NANODEVICE, AND METHOD FOR MANUFACTURING THE TRANSISTOR Postech Academy-Industry Foundation (KR) 2010-11-10 EP disclosed
US-20090224240-A1 SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD OF MANUFACTURING THEREFOR THE FURUKAWA ELECTRIC CO., LTD. (JP) 2009-09-10 US disclosed
WO-2009099259-A1 NANODEVICE, TRANSISTOR COMPRISING THE NANODEVICE, METHOD FOR MANUFACTURING THE NANODEVICE, AND METHOD FOR MANUFACTURING THE TRANSISTOR POSTECH ACADEMY-INDUSTRY FOUNDATION (KR) 2009-08-13 WO disclosed
US-20090068411-A1 Nanodevice Comprising a Nanorod and Method for Manufacturing the Same POSTECH ACADEMY-INDUSTRY FOUNDATION (KR) 2009-03-12 US disclosed