Tetrabuthylammonium

Tetrabuthylammonium

SCHEMBL987326

CCCC[N+](CCCC)(CCCC)CCCC.I.I.I

nearest known ligand 0.92

Full drug profile on Sugi Atlas →

Known targets — ChEMBL curated mechanism

ACHECHRM1CHRM3CHRNA1CHRNB1CHRNDCHRNECHRNG

The experimentally established mechanism targets of Tetrabuthylammonium. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
SLC22A1 O15245 4/20 0.92
SLC22A2 O15244 1/20 0.79
TSHR P16473 2/20 0.69
ALDH1A1 P00352 1/20 0.69
TP53 P04637 1/20 0.69
CYP3A4 P08684 1/20 0.69
ALOX15 P16050 1/20 0.69
ALOX12 P18054 1/20 0.69
SMN1; SMN2 Q16637 1/20 0.69
HIF1A Q16665 1/20 0.69
HSD17B10 Q99714 1/20 0.69
DNM1 Q05193 6/20 0.61

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Tetrabuthylammonium SCHEMBL25195464 1.00 SLC22A1 (0.92) SLC22A1SLC22A2TSHRALDH1A1TP53
Tetrabuthylammonium SCHEMBL1782492 1.00 SLC22A1 (0.92) SLC22A1SLC22A2TSHRALDH1A1TP53
Tetrabuthylammonium SCHEMBL7960336 1.00 SLC22A1 (0.92) SLC22A1SLC22A2TSHRALDH1A1TP53
Tetrabuthylammonium SCHEMBL28480846 1.00 SLC22A1 (0.92) SLC22A1SLC22A2TSHRALDH1A1TP53
Tetrabuthylammonium SCHEMBL28633808 1.00 SLC22A1 (0.92) SLC22A1SLC22A2TSHRALDH1A1TP53
Tetrabuthylammonium SCHEMBL987325 0.96 SLC22A1 (0.86) SLC22A1SLC22A2TSHRALDH1A1TP53
Tetrabuthylammonium SCHEMBL29289305 0.96 SLC22A1 (0.86) SLC22A1SLC22A2TSHRALDH1A1TP53
Tetrabuthylammonium SCHEMBL21525928 0.96 SLC22A1 (0.86) SLC22A1SLC22A2TSHRALDH1A1TP53
Tetrabuthylammonium SCHEMBL22720005 0.96 SLC22A1 (0.86) SLC22A1SLC22A2TSHRALDH1A1TP53
Tetrabuthylammonium SCHEMBL28960737 0.96 SLC22A1 (0.86) SLC22A1SLC22A2TSHRALDH1A1TP53

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 178 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-119751217-A Preparation method of 2-cyclohexyl-5-methylphenol 滁州市庆云医药有限公司 2025-04-04 CN claimed
CN-119230763-A Mixed positive electrode for solid-state battery, corresponding battery and preparation method 华南理工大学 2024-12-31 CN claimed
WO-2024081696-A2 COMPOSITIONS CONTAINING PHASE CHANGE MATERIALS, METHODS FOR FORMING OBJECTS USING THE SAME, AND METHOD FOR USING THE SAME PHASE CHANGE ENERGY SOLUTIONS, INC. (US) 2024-04-18 WO claimed
CN-109504015-B Electrochromic polymer material based on combination strategy and preparation of electrochromic device 常州铱视光电科技有限公司 2021-05-11 CN claimed
CN-112542522-A Doping method of copper bismuth iodine solar cell light absorption layer 西北工业大学 2021-03-23 CN claimed
CN-108949141-B Preparation method of bistable electrochromic material and application of bistable electrochromic material in preparation of electrochromic device 常州铱视光电科技有限公司 2021-02-05 CN claimed
CN-107530620-B Flue gas purification system and method using sorbent polymer composites W.L.戈尔及同仁股份有限公司 2021-01-29 CN claimed
CN-112206792-A Catalyst for heavy metal sewage treatment and preparation method thereof 广州绿然环保新材料科技有限公司 2021-01-12 CN claimed
CN-112059202-A Preparation method and application of silver-copper bimetallic nano-fiber 昆明贵研新材料科技有限公司 2020-12-11 CN claimed
CN-111117594-A Electrochromic material based on dynamic metal-ligand complexation and electrochromic device 吉林大学 2020-05-08 CN claimed
US-20150162213-A1 FORMULATIONS FOR WET ETCHING NIPT DURING SILICIDE FABRICATION ADVANCED TECHNOLOGY MATERIALS, INC. (US) 2015-06-11 US claimed
EP-2847364-A1 FORMULATIONS FOR WET ETCHING NIPT DURING SILICIDE FABRICATION Entegris, Inc. (US) 2015-03-18 EP claimed
US-20140335698-A1 COMPONENT OF A PLASMA PROCESSING APPARATUS HAVING A PROTECTIVE IN SITU FORMED LAYER ON A PLASMA EXPOSED SURFACE LAM RESEARCH CORPORATION (US) 2014-11-13 US claimed
US-8885135-B2 Nanostructure-film LCD devices SAMSUNG ELECTRONICS CO., LTD. (KR) 2014-11-11 US claimed
WO-2013170130-A1 FORMULATIONS FOR WET ETCHING NIPT DURING SILICIDE FABRICATION ADVANCED TECHNOLOGY MATERIALS, INC. (US) 2013-11-14 WO claimed
US-20120308771-A1 NANOSTRUCTURE FILMS DRAZAIC PAUL (US) 2012-12-06 US claimed
JP-2011527809-A 2011-11-04 JP claimed
WO-2009152146-A1 IMPROVED CNT/TOPCOAT PROCESSES FOR MAKING A TRANSPLANT CONDUCTOR UNIDYM, INC. (US) 2009-12-17 WO claimed
US-20090147167-A1 Nanostructure-Film LCD Devices SAMSUNG ELECTRONICS CO., LTD. (KR) 2009-06-11 US claimed
WO-2009058763-A1 NANOSTRUCTURE-FILM LCD DEVICES UNIDYM, INC. (US) 2009-05-07 WO claimed