⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL9193932 | 0.97 | — | — | |
| Diethylamine SCHEMBL27845634 | 0.84 | TP53 (0.33) | — | |
| Diethylamine SCHEMBL27856199 | 0.81 | TP53 (0.35) | — | |
| SCHEMBL15915206 | 0.75 | — | — | |
| SCHEMBL28020529 | 0.72 | — | — | |
| SCHEMBL8955258 | 0.72 | — | — | |
| SCHEMBL8955091 | 0.72 | — | — | |
| SCHEMBL8955613 | 0.72 | — | — | |
| SCHEMBL15914961 | 0.71 | — | — | |
| SCHEMBL15015964 | 0.71 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 20 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-117059479-A | Pattern forming method, pattern and semiconductor device | 成都高真科技有限公司 | 2023-11-14 | — | — | CN | disclosed |
| US-8871656-B2 | Flowable films using alternative silicon precursors | APPLIED MATERIALS, INC. (US) | 2014-10-28 | — | — | US | disclosed |
| US-8759223-B2 | Double patterning etching process | APPLIED MATERIALS, INC. (US) | 2014-06-24 | — | — | US | disclosed |
| US-20140051264-A1 | FLOWABLE FILMS USING ALTERNATIVE SILICON PRECURSORS | APPLIED MATERIALS, INC. (US) | 2014-02-20 | — | — | US | disclosed |
| WO-2013032873-A1 | DOUBLE PATTERNING ETCHING PROCESS | APPLIED MATERIALS, INC. (US) | 2013-03-07 | — | — | WO | disclosed |
| US-20130048605-A1 | DOUBLE PATTERNING ETCHING PROCESS | APPLIED MATERIALS, INC. (US) | 2013-02-28 | — | — | US | disclosed |
| US-8242031-B2 | High quality silicon oxide films by remote plasma CVD from disilane precursors | APPLIED MATERIALS, INC. (US) | 2012-08-14 | — | — | US | disclosed |
| US-20110151676-A1 | METHODS OF THIN FILM PROCESS | APPLIED MATERIALS, INC. (US) | 2011-06-23 | — | — | US | disclosed |
| US-7939422-B2 | Methods of thin film process | APPLIED MATERIALS, INC. (US) | 2011-05-10 | — | — | US | disclosed |
| US-20110014798-A1 | HIGH QUALITY SILICON OXIDE FILMS BY REMOTE PLASMA CVD FROM DISILANE PRECURSORS | APPLIED MATERIALS, INC. (US) | 2011-01-20 | — | — | US | disclosed |
| US-7871926-B2 | Methods and systems for forming at least one dielectric layer | APPLIED MATERIALS, INC. (US) | 2011-01-18 | — | — | US | disclosed |
| US-7867923-B2 | High quality silicon oxide films by remote plasma CVD from disilane precursors | APPLIED MATERIALS, INC. (US) | 2011-01-11 | — | — | US | disclosed |
| US-7803722-B2 | Methods for forming a dielectric layer within trenches | APPLIED MATERIALS, INC (US) | 2010-09-28 | — | — | US | disclosed |
| EP-2053641-A2 | Methods for forming a dielectric layer within trenches | Applied Materials, Inc. (US) | 2009-04-29 | — | — | EP | disclosed |
| EP-2053143-A2 | High quality silicon oxide films by remote plasma cvd from disilane precursors | Applied Materials, Inc. (US) | 2009-04-29 | — | — | EP | disclosed |
| US-20090104790-A1 | Methods for Forming a Dielectric Layer Within Trenches | APPLIED MATERIALS, INC. (US) | 2009-04-23 | — | — | US | disclosed |
| US-20090104764-A1 | Methods and Systems for Forming at Least One Dielectric Layer | APPLIED MATERIALS, INC. (US) | 2009-04-23 | — | — | US | disclosed |
| US-20090104755-A1 | HIGH QUALITY SILICON OXIDE FILMS BY REMOTE PLASMA CVD FROM DISILANE PRECURSORS | APPLIED MATERIALS, INC. (US) | 2009-04-23 | — | — | US | disclosed |
| US-20080182382-A1 | METHODS OF THIN FILM PROCESS | APPLIED MATERIALS, INC. (US) | 2008-07-31 | — | — | US | disclosed |
| CN-1047305-A | Form of spherical particles at high porosity crystalline propene polymer and multipolymer | HIMONT INC (US) | 1990-11-28 | — | — | CN | disclosed |