Predicted protein targets (top 1)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | TSHR | P16473 | 1/20 | 0.32 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL91328 | 0.93 | TSHR (0.33) | TSHR | |
| SCHEMBL13458354 | 0.88 | — | — | |
| SCHEMBL13890233 | 0.87 | TSHR (0.37) | TSHR | |
| SCHEMBL9888274 | 0.85 | TSHR (0.30) | TSHR | |
| SCHEMBL13458351 | 0.81 | — | — | |
| SCHEMBL9888275 | 0.80 | USP2 (0.31) | TSHR | |
| SCHEMBL14265520 | 0.78 | BCHE (0.34) | — | |
| SCHEMBL1153848 | 0.72 | CYP2C9 (0.33) | — | |
| SCHEMBL1153058 | 0.72 | CYP2C9 (0.33) | — | |
| SCHEMBL1153056 | 0.72 | CYP2C9 (0.33) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 11 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8288072-B2 | Antireflection film; fast etching speed whcih reduces deformation; accuracy; 2,3-epoxypropyl methacrylate ester-styrene copolymer | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-10-16 | — | — | US | disclosed |
| US-8211618-B2 | Positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-07-03 | — | — | US | disclosed |
| US-8198016-B2 | Patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-06-12 | — | — | US | disclosed |
| US-20100227273-A1 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-09-09 | — | — | US | disclosed |
| US-20100055621-A1 | Patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-03-04 | — | — | US | disclosed |
| US-20090286188-A1 | Patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-11-19 | — | — | US | disclosed |
| US-20090226843-A1 | MONOMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-09-10 | — | — | US | disclosed |
| US-20090087786-A1 | PATTERNING PROCESS AND RESIST COMPOSITION USED THEREIN | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-04-02 | — | — | US | disclosed |
| US-7491483-B2 | Polymers, positive resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-02-17 | — | — | US | disclosed |
| US-20080227037-A1 | Resist lower layer film composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-09-18 | — | — | US | disclosed |
| US-7368218-B2 | Positive resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-05-06 | — | — | US | disclosed |