⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL968847 | 1.00 | — | — | |
| SCHEMBL29370066 | 0.87 | — | — | |
| Hydrochloric Acid SCHEMBL972574 | 0.75 | — | — | |
| Bromide SCHEMBL42157 | 0.75 | — | — | |
| Bromide SCHEMBL150527 | 0.75 | — | — | |
| Iodide SCHEMBL7850409 | 0.75 | — | — | |
| Fluoride SCHEMBL6535706 | 0.75 | — | — | |
| Iodide SCHEMBL2428472 | 0.75 | — | — | |
| Fluoride SCHEMBL150865 | 0.75 | — | — | |
| Hydrochloric Acid SCHEMBL149699 | 0.75 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 226 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-116099497-A | Composite lithium adsorbent and preparation method thereof | 中国科学院过程工程研究所 | 2023-05-12 | — | — | CN | claimed |
| US-7737024-B2 | Small grain size, conformal aluminum interconnects and method for their formation | MICRON TECHNOLOGY, INC. (US) | 2010-06-15 | — | — | US | claimed |
| US-7560816-B2 | Small grain size, conformal aluminum interconnects and method for their formation | MICRON TECHNOLOGY, INC. (US) | 2009-07-14 | — | — | US | claimed |
| US-20070296084-A1 | Small grain size, conformal aluminum interconnects and method for their formation | MICRON TECHNOLOGY, INC. | 2007-12-27 | — | — | US | claimed |
| US-7217661-B2 | Small grain size, conformal aluminum interconnects and method for their formation | MICRON TECHNOLOGY, INC. (US) | 2007-05-15 | — | — | US | claimed |
| US-20060194434-A1 | SMALL GRAIN SIZE, CONFORMAL ALUMINUM INTERCONNECTS AND METHOD FOR THEIR FORMATION | MICRON TECHNOLOGY, INC. | 2006-08-31 | — | — | US | claimed |
| US-20060014386-A1 | Small grain size, conformal aluminum interconnects and method for their formation | MICRON TECHNOLOGY, INC. | 2006-01-19 | — | — | US | claimed |
| US-6946393-B2 | Small grain size, conformal aluminum interconnects and method for their formation | MICRON TECHNOLOGY, INC. (US) | 2005-09-20 | — | — | US | claimed |
| US-20050006774-A1 | Small grain size, conformal aluminum interconnects and method for their formation | MICRON TECHNOLOGY, INC. | 2005-01-13 | — | — | US | claimed |
| US-6355548-B1 | Method for manufacturing a gate structure incorporated therein a high K dielectric | HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. (KR) | 2002-03-12 | — | — | US | claimed |
| US-5180687-A | Electroconductive | CANON KABUSHIKI KAISHA (JP) | 1993-01-19 | — | — | US | claimed |
| US-5179042-A | Vapor deposition | CANON KABUSHIKI KAISHA (JP) | 1993-01-12 | — | — | US | claimed |
| US-5154949-A | Additive-containing; good surface morphology; transistors; semiconductors | CANON KABUSHIKI KAISHA (JP) | 1992-10-13 | — | — | US | claimed |
| EP-0493002-A1 | Process for forming deposition film | Tsubouchi, Kazuo (JP) | 1992-07-01 | — | — | EP | claimed |
| EP-0466320-A2 | Process for preparing a semiconductor device including the selective deposition of a metal | CANON KABUSHIKI KAISHA (JP) | 1992-01-15 | — | — | EP | claimed |
| EP-0425084-A1 | Process for forming deposited film by use of alkyl aluminum hydride | CANON KABUSHIKI KAISHA (JP) | 1991-05-02 | — | — | EP | claimed |
| EP-0420597-A2 | Process for forming a deposited film by use of alkyl aluminum hydride and process for preparing semiconductor device | CANON KABUSHIKI KAISHA (JP) | 1991-04-03 | — | — | EP | claimed |
| EP-0420595-A2 | Deposited film formation method utilizing selective deposition by use of alkyl aluminum hydride | CANON KABUSHIKI KAISHA (JP) | 1991-04-03 | — | — | EP | claimed |
| EP-0420594-A2 | Process for forming metal deposited film containing aluminium as main component by use of alkyl aluminium hydride | CANON KABUSHIKI KAISHA (JP) | 1991-04-03 | — | — | EP | claimed |
| EP-0417997-A1 | Process for forming metal deposited film containing aluminum as main component by use of alkyl aluminum hydride | CANON KABUSHIKI KAISHA (JP) | 1991-03-20 | — | — | EP | claimed |