SCHEMBL9924192

SCHEMBL9924192

CCC(C)(C)C(=O)OCC(=O)OC1CC2CC1C1COC(=O)C21

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL9924194 0.91
SCHEMBL47530 0.89 HMGCR (0.35)
SCHEMBL47571 0.88
SCHEMBL47514 0.88
SCHEMBL13557787 0.84
SCHEMBL18791237 0.81 CHRM2 (0.36)
SCHEMBL22236870 0.81 SMN1; SMN2 (0.31)
SCHEMBL16744068 0.81
SCHEMBL9924193 0.80 HMGCR (0.30)
SCHEMBL19036982 0.80

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 16 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20230137472-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-05-04 US disclosed
US-20170184967-A1 RESIST COMPOSITION, PATTERN FORMING PROCESS, POLYMER, AND MONOMER SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-06-29 US disclosed
US-9618842-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2017-04-11 US disclosed
US-8980524-B2 Positive resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2015-03-17 US disclosed
US-8497395-B2 Compound TOKYO OHKA KOGYO CO., LTD. (JP) 2013-07-30 US disclosed
US-8487056-B2 Positive resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2013-07-16 US disclosed
US-8440385-B2 Positive resist composition, method of forming resist pattern and polymeric compound TOKYO OHKA KOGYO CO., LTD. (JP) 2013-05-14 US disclosed
US-8415082-B2 Resist composition, method of forming resist pattern, compound and method of producing the same, acid generator TOKYO OHKA KOGYO CO., LTD. (JP) 2013-04-09 US disclosed
US-20120329969-A1 POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN MATSUMIYA TASUKU (JP) 2012-12-27 US disclosed
US-8252509-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2012-08-28 US disclosed
US-20120149916-A1 NOVEL COMPOUND CENTRAL GLASS CO., LTD. (JP) 2012-06-14 US disclosed
US-20110244392-A1 POSITIVE RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN AND POLYMERIC COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 2011-10-06 US disclosed
US-20110236824-A1 POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2011-09-29 US disclosed
US-20110165512-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2011-07-07 US disclosed
US-20110117491-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2011-05-19 US disclosed
US-20100273105-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND AND METHOD OF PRODUCING THE SAME, ACID GENERATOR TOKYO OHKA KOGYO CO., LTD. (JP) 2010-10-28 US disclosed