SCHEMBL9945774

SCHEMBL9945774

CC(=C(F)F)S(=O)(=O)Oc1c(C(C)C)cccc1C(C)C

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL107196 0.75
SCHEMBL17452138 0.75
SCHEMBL2458583 0.75
SCHEMBL13344858 0.73
SCHEMBL8941158 0.72
SCHEMBL7568858 0.72
SCHEMBL4875993 0.72 CA1 (0.45)
SCHEMBL8125470 0.71
SCHEMBL15726654 0.70
SCHEMBL9708149 0.70

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 18 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9551935-B2 Pattern forming method and resist composition FUJIFILM CORPORATION (JP) 2017-01-24 US disclosed
US-9223219-B2 Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition and resist film FUJIFILM CORPORATION (JP) 2015-12-29 US disclosed
US-8999621-B2 Pattern forming method, chemical amplification resist composition and resist film FUJIFILM CORPORATION (JP) 2015-04-07 US disclosed
US-8975002-B2 Positive resist composition for immersion exposure and pattern forming method FUJIFILM CORPORATION (JP) 2015-03-10 US disclosed
US-8932794-B2 Positive photosensitive composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2015-01-13 US disclosed
US-8808965-B2 Pattern forming method, pattern, chemical amplification resist composition and resist film FUJIFILM CORPORATION (JP) 2014-08-19 US disclosed
US-8795944-B2 Actinic ray-sensitive or radiation-sensitive resin composition and pattern forming method using the composition FUJIFILM CORPORATION (JP) 2014-08-05 US disclosed
US-8647812-B2 Pattern forming method, chemical amplification resist composition and resist film FUJIFILM CORPORATION (JP) 2014-02-11 US disclosed
US-8541159-B2 Positive resist composition for immersion exposure and pattern forming method FUJIFILM CORPORATION (JP) 2013-09-24 US disclosed
US-20130011785-A1 PATTERN FORMING METHOD AND RESIST COMPOSITION FUJIFILM CORPORATION (JP) 2013-01-10 US disclosed
US-20130011619-A1 PATTERN FORMING METHOD, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM FUJIFILM CORPORATION (JP) 2013-01-10 US disclosed
US-20120322007-A1 PATTERN FORMING METHOD, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM FUJIFILM CORPORATION (JP) 2012-12-20 US disclosed
US-20120288691-A1 PATTERN FORMING METHOD, PATTERN, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM FUJIFILM CORPORATION (JP) 2012-11-15 US disclosed
US-20120282548-A1 PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST FILM FUJIFILM CORPORATION (JP) 2012-11-08 US disclosed
US-20120148957-A1 PATTERN FORMING METHOD, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM FUJIFILM CORPORATION (JP) 2012-06-14 US disclosed
US-20110318687-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2011-12-29 US disclosed
US-20110143280-A1 POSITIVE RESIST COMPOSITION FOR IMMERSION EXPOSURE AND PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2011-06-16 US disclosed
US-20110136062-A1 POSITIVE PHOTOSENSITIVE COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2011-06-09 US disclosed